High energy beam polysilicon purifying device

A technology of polysilicon and high-energy beams, which is applied in the direction of silicon compounds, inorganic chemistry, non-metallic elements, etc., can solve problems such as environmental pollution, high cost, and large energy consumption

Inactive Publication Date: 2008-07-16
BEIHANG UNIV
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Problems solved by technology

It solves the defects of large investment, high cost, large energy consumption and serious

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  • High energy beam polysilicon purifying device
  • High energy beam polysilicon purifying device
  • High energy beam polysilicon purifying device

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[0020] The present invention will be further described in detail below in conjunction with the accompanying drawings.

[0021] As shown in Figure 1, the present invention is a high-energy beam polysilicon purification device integrating iso-vacuum electromagnetic induction melting, electron beam melting, ion melting, and directional solidification. The purification device includes a directional solidification unit 1, a vacuum Chamber 2, plasma melting unit, electron beam melting unit, vacuum electromagnetic induction melting unit 5; vacuum electromagnetic induction melting unit 5 is installed on the concave surface 215 of vacuum chamber 2; electron beam melting unit A electron gun 41 is installed in vacuum chamber 2 The B electron gun 42 is installed on the right slope 214 of the vacuum chamber 2; the A plasma gun 31 of the plasma smelting unit is installed on the left housing 216 of the vacuum chamber 2, and the B plasma gun 32 is installed on the vacuum chamber 2 On the right sh...

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Abstract

The invention discloses a device for purifying polysilicon by using a high energy beam, comprising a vacuum chamber, a vacuum electromagnetic induction smelting unit, an electron beam smelting unit, a plasma smelting unit and a directional solidification unit. The vacuum electromagnetic induction smelting unit is arranged on a concave surface of the vacuum chamber; an A electron gun of the electron beam smelting unit is arranged on a left inclined plane of the vacuum chamber and a B electron gun is arranged on a right inclined plane of the vacuum chamber; an A plasma gun of the plasma smelting unit is arranged on a left shell body of the vacuum chamber and a B plasma gun is arranged on a right shell body of the vacuum chamber; a connecting base of the directional solidification unit is arranged on a separator of the vacuum chamber; the invention aims at providing a device for purifying the polysilicon by using the high energy beam which integrates four technologies of the vacuum electromagnetic induction smelting, the plasma smelting, the electron beam smelting and the directional solidification; the purifying device carries out vacuum electromagnetic induction smelting, plasma smelting, electron beam smelting and directional solidification sequentially for silicon metal of 99.9 percent to obtain the polysilicon with a purity of 99.9999 percent which is used for producing solar batteries. The invention solves the defects of large equipment input, high cost, large energy consumption and serious environmental pollution in the prior chemical methods for producing solar grade silicon.

Description

technical field [0001] The invention relates to a kind of equipment for purifying metal and non-metal materials, more specifically, it refers to a high-energy beam polysilicon purification which integrates vacuum electromagnetic induction smelting, electron beam smelting, plasma smelting and directional solidification. device. Background technique [0002] The development and utilization of photovoltaic technology is an effective way to solve strategic problems such as global energy shortage and ecological environment deterioration. Polycrystalline silicon cells account for more than 60% of the world's total solar cell production. [0003] In 2005, the gap of high-purity polysilicon required by the global photovoltaic industry reached 24%, and the gap in my country was as high as 97%. The shortage of solar-grade polysilicon materials is the bottleneck restricting the solar photovoltaic industry. [0004] The existing production methods of solar grade silicon include chemic...

Claims

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Application Information

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IPC IPC(8): C01B33/037
Inventor 李合非宋连红逄广林徐惠彬
Owner BEIHANG UNIV
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