Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for producing soakage controllable zinc oxide nano-stick array thin film

A zinc oxide nanorod, wettability technology, applied in the field of nanomaterials, can solve problems such as temperature sensitivity, limited application, and limitation

Inactive Publication Date: 2008-07-16
UNIV OF SCI & TECH BEIJING
View PDF0 Cites 32 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the poor stability of organic matter, especially the sensitivity to temperature, limits the application of this method; the other is to irradiate the array with ultraviolet light, and changing the intensity and irradiation time of ultraviolet light can cause oxygen vacancies to appear on the surface of the array to varying degrees. , also changing the surface chemical composition to obtain arrays with different wettability
However, once the ultraviolet light is removed, the oxygen vacancies and electrons recombine to make the wettability of the array gradually return to the original state, which also limits the application of this method.
[0004] It can be seen that by changing the chemical composition of the array surface to control the wettability of the array, there is a problem that the surface chemical composition is unstable and the wettability of the array will change.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for producing soakage controllable zinc oxide nano-stick array thin film
  • Method for producing soakage controllable zinc oxide nano-stick array thin film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Example 1: When the density is controlled by controlling the colloid, the above conditions are kept unchanged, and the colloid concentration is selected to be 1mol / L, 0.1mol / L, 0.001mol / L, and 0.0001mol / L.

Embodiment 2

[0025] Example 2: When controlling the density by controlling the number of times of glue rejection, the number of times of glue rejection is 1, 3, 5, 7, 9 times.

Embodiment 3

[0026] Example 3: When the density is controlled by controlling the annealing temperature, the substrate after spun glue is annealed at 500° C., and the annealing time is 5 min, 30 min and 60 min.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Diameteraaaaaaaaaa
Login to View More

Abstract

The invention relates to a method for preparing zinc oxide nano-rods array membrane with controllable wettability, which belongs to a field of nano materials. The invention uses zinc acetate sol to prepare adhesive membrane on a basement through spinning technics; a crystal membrane is generated after annealing; the basement is positioned in mixed precursor solution of zinc nitrate and hexamethylene tetrammine and is hydro-deposited for 3-5 hours under a temperature ranging from 90 DEG C to 100 DEG C; the zinc oxide nano-rods array can be prepared on the basement. At the same time, by controlling concentration of the sol, times of spinning, temperature and time of annealing, controllability of the zinc oxide nano-rods array density and controllability of the array wettability can be realized; problem of unsteady wettability of the array can also be overcome.

Description

technical field [0001] The invention belongs to the field of nanometer materials, in particular to a preparation technology of nanomaterials with controllable wettability. Background technique [0002] Zinc oxide is a direct bandgap II-VI semiconductor material, its room temperature bandgap can reach 3.37eV, and the exciton binding energy is as high as 60meV, which is one of the important foundations for zinc oxide as an excellent photoelectric emission device material. The reported lasing phenomenon of ZnO nanorod arrays in recent years has aroused people's enthusiasm for the synthesis of one-dimensional highly ordered ZnO nanostructures. The preparation methods of zinc oxide nanorod arrays mainly include gas-solid-liquid growth method (VLS), electrochemical deposition method (ED) and hydrothermal method. In comparison, technologies such as VLS and ED have high requirements on equipment and environment. Examples include substrates that are lattice-matched to the substrate ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C01G9/02
Inventor 郭敏马腾张梅
Owner UNIV OF SCI & TECH BEIJING
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products