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Semiconductor module, method for manufacturing the semiconductor module and portable device carrying the same

A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problems of reduced connection reliability, fewer places for resin discharge, and low fluidity of insulating layers, etc., to achieve Effect of improved connection reliability

Inactive Publication Date: 2008-07-30
SANYO ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In the state of the existing semiconductor wafer (semiconductor substrate), when the protrusion structure is buried in the insulating layer to laminate the metal plate, insulating layer and circuit elements, the fluidity of the insulating layer is low, especially in the semiconductor wafer. There are few discharge places for the resin extruded by the protrusion structure near the center, so there is a problem that the residual film of the resin is caught on the interface between the protrusion structure and the electrode of the circuit element facing it, and the connection reliability at the rewiring part is reduced.

Method used

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  • Semiconductor module, method for manufacturing the semiconductor module and portable device carrying the same
  • Semiconductor module, method for manufacturing the semiconductor module and portable device carrying the same
  • Semiconductor module, method for manufacturing the semiconductor module and portable device carrying the same

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no. 1 approach

[0053] FIG. 1 is an outline sectional view of a semiconductor module according to a first embodiment of the present invention. A semiconductor module of a first embodiment is explained based on FIG. 1 .

[0054] The semiconductor substrate 1 adopts a P-type silicon substrate or the like, and circuit elements 2 such as predetermined circuits are formed on the surface S1 (lower side) by known techniques, and electrodes of the circuit elements 2 are formed on the surface S1 (especially the edge portion) that becomes the mounting surface. 2a. A protective film 3 is formed on a region on the surface of the semiconductor substrate 1 other than the electrode 2a. On the surface S1 (lower side) of the semiconductor substrate 1, an insulating layer 7 is formed on the electrode 2a and the protective film 3 in order to further expand the pitch of the electrode 2a, and the exposed surface of the electrode 2a is connected to the exposed surface of the electrode 2a through the insulating la...

no. 2 approach

[0082] Fig. 7 is a cross-sectional view of a copper plate having protrusions and grooves for illustrating a second embodiment of the present invention. 8 and 9 are schematic cross-sectional views for explaining the manufacturing process of the semiconductor module of the second embodiment. Next, the manufacturing process of the semiconductor module of the second embodiment will be described with reference to FIGS. 7 to 9 .

[0083] As shown in FIG. 7 , the difference from the copper plate having protrusions and grooves in the first embodiment is that grooves 4 b 1 are formed not in semiconductor module formation region 6 but in scribe lines 5 . In addition, the groove portion 4 b 1 is formed in a grid pattern so as to surround the semiconductor module formation region 6 (semiconductor substrate 1 ) along the scribe line 5 . The copper plate 4z having such a groove portion 4b1 can be easily produced by changing the mask pattern of the resist mask 9b shown in FIG. 3(A). Other ...

no. 3 approach

[0097] Fig. 10 is a cross-sectional view of a copper plate having protrusions and grooves for illustrating a third embodiment of the present invention. 11 and 12 are schematic cross-sectional views for explaining the manufacturing process of the semiconductor module of the third embodiment. Next, the manufacturing process of the semiconductor module of the third embodiment will be described with reference to FIGS. 10 to 12 .

[0098] As shown in FIG. 10, the difference from the copper plate having protrusions and grooves in the first embodiment is that the grooves 4b2 are formed corresponding to the spatial pattern of the rewiring pattern (wiring layer) 4. In addition, the depth of the groove portion 4b2 is the same as the height of the rewiring pattern (wiring layer) 4, which is about 30 µm. The copper plate 4z having such a groove portion 4b2 can be easily made by changing the mask pattern of the resist mask 9b shown in FIG. 3(A) and controlling the etching treatment condit...

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Abstract

The invention provides a semiconductor module, a manufacturing method of the semiconductor module and a portable device. In a semiconductor module in which a metal plate, an insulating layer, and a circuit element are laminated by embedding the protrusion structure in an insulating layer, connection reliability between the protrusion structure and an electrode of the circuit element is improved. A semiconductor wafer is prepared in which semiconductor substrates having electrodes and a protective film on the surface are formed in a matrix. Next, on the surface of the semiconductor wafer (semiconductor substrate), an insulating layer is sandwiched between the semiconductor substrate and a copper plate integrally formed with a protrusion and having a groove near it. After performing such clamping, the semiconductor substrate, the insulating layer, and the copper plate are integrated by press forming with a press device. Accordingly, the protrusion penetrates through the insulating layer, and the protrusion and the electrode are electrically connected. At the same time, the excess insulating layer squeezed out by the protrusions flows into the grooves.

Description

technical field [0001] The present invention relates to a semiconductor module and a method of manufacturing the same. Background technique [0002] Among conventional semiconductor modules, there is a semiconductor module called a CSP (Chip Size Package: chip size package). Such a CSP semiconductor module is formed by dicing and dividing a semiconductor wafer (semiconductor substrate) in which LSI (circuit elements) and external connection electrodes connected thereto are formed on one main surface. Therefore, the semiconductor module can be fixed on the wiring substrate with the same size as the LSI chip, so that the wiring substrate on the side where the semiconductor module is mounted can be miniaturized. [0003] In recent years, along with miniaturization and performance enhancement of electronic equipment, semiconductor modules used in electronic equipment have been required to be further miniaturized. With miniaturization of such a semiconductor module, it is essen...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/603H01L23/488H01L23/13
CPCH01L24/94H01L2224/13H01L2924/01029H01L2924/14
Inventor 冈山芳央
Owner SANYO ELECTRIC CO LTD
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