Method for establishing equivalent diffusion model of chemistry amplitude photoresist

A chemical amplification and diffusion model technology, which is applied in calculation models, micro-lithography exposure equipment, and based on specific mathematical models, can solve the problems of inaccurate lithography process simulation results and inconsistencies in actual exposure results, so as to reduce measurement work, The effect of improving efficiency and improving accuracy

Active Publication Date: 2008-09-03
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology

Therefore, the diffusion model used in the prior art will cause the simulation results of various parameters of the photolithography process to be inaccurate, making the simulation results inconsistent with the actual exposure results of silicon wafers

Method used

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  • Method for establishing equivalent diffusion model of chemistry amplitude photoresist
  • Method for establishing equivalent diffusion model of chemistry amplitude photoresist
  • Method for establishing equivalent diffusion model of chemistry amplitude photoresist

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Embodiment Construction

[0020] Such as figure 1 Shown is a schematic flow chart of the method for establishing a chemically amplified photoresist equivalent diffusion model according to the present invention, including the following steps:

[0021] The first step is to measure the lithography process parameters of the photoresist for a group of different types of test patterns at different pattern distribution densities, such as mask error factor (Mask error factor), exposure dose margin (Exposure latitude), or The spatial image contrast calculated by the previous two parameters. Wherein, the photoresist mainly refers to the chemically amplified photoresist (Chemically Amplified Resist) using a photoacid generator (Photo Acid generator), and also includes other photoresists that use a diffusible photosensitive component (Photo Active Compound) glue. The type of the test pattern, as shown in Figure 2, mainly includes dense lines (such as Figure 2a shown), isolated lines (such as Figure 2b shown)...

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Abstract

The invention discloses a method for building an equivalent diffusion model for a chemical amplification photoresist, in which the effect of the graph distribution density of a mask graph to the diffusion length of the photoresist is taken into consideration, so that a more precise photoresist equivalent diffusion model is built, and the accuracy of simulating results of photoetching parameters is improved. The method comprises the following steps: (1) measuring the photoetching parameters of the photoresist, with a group of different types of testing graphs at different graph distribution densities; (2) calculating the equivalent length of photoresit photoacide to the different types of testing graphs at different graph distribution densities by aerial image simulation; (3) creating a function or table of the equivalent diffusion length of the photoresit photoacide to all types of testing graphs at different graph distribution densities; and (4) selecting an optimal equivalent diffusion length of a graph to be simulated, according to the type and the distribution density of the graph to be simulated.

Description

technical field [0001] The invention relates to a method for establishing an equivalent diffusion model, in particular to a method for establishing a chemically amplified photoresist equivalent diffusion model. Background technique [0002] Currently, the model for the equivalent diffusion of chemically amplified photoresist is a uniform diffusion model that is the same for any pattern. This diffusion model assumes that the photoacid generator converts the irradiated light into photoacid, and the photoacid catalyzes the link or chain scission reaction in the process of catalyzing while diffusing to form dissolved or insoluble in the photoresist. in the developer area. Because the diffusion of photoacid will affect the contrast of the aerial image, and this effect will increase with the increase of the diffusion length. However, the photoresist equivalent diffusion model used in commercial simulation software still assumes that the equivalent diffusion length of photoresist...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20G06F17/50G06N7/00G03F7/038G03F7/039H01L21/027
Inventor 伍强王雷丁华吴鹏闻人青青彭超群
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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