Memory device and memory

A storage element and storage layer technology, applied in static memory, digital memory information, electrical components, etc., can solve problems such as write errors, inability to ensure thermal stability of the storage layer, etc., achieve reliable memory, good balance characteristics, and reduce power consumption Effect

Inactive Publication Date: 2008-09-17
SONY CORP
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0039] If the thermal stability of the storage layer cannot be ensured, the magnetizati

Method used

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[0169] Here, a memory element having a configuration of a memory element according to an embodiment of the present invention was prepared as a sample. That is, the memory element is prepared by adjusting the level of the effective demagnetization field to which the memory layer is subjected. This adjustment is made by specifically selecting the material of the ferromagnetic layer constituting the storage layer or of a layer adjacent to the storage layer. Then, study the characteristics of the memory element.

[0170] Such as Figure 4 As shown, the actual configuration of the memory includes, in addition to the memory element, a semiconductor circuit for performing conversion, and the like. Here, in order to study the characteristics of reversing the magnetization direction of the memory layer, a study was conducted on a wafer on which only one memory element was formed.

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Abstract

A memory device is provided. The memory device includes a memory layer and a fixed-magnetization layer. The memory layer retains information based on a magnetization state of a magnetic material. The fixed-magnetization layer is formed on the memory layer through an intermediate layer made of an insulating material. The information is recorded on the memory layer with a change in a magnetization direction of the memory layer caused by injecting a spin-polarized electron in a stacked direction. A level of effective demagnetizing field, which is received by the memory layer, is smaller than a saturation-magnetization level of magnetization of the memory layer.

Description

[0001] Cross References to Related Applications [0002] The present invention contains subject matter related to Japanese Patent Application JP2007-066907 filed in the Japan Patent Office on Mar. 15, 2007, the entire content of which is hereby incorporated by reference. technical field [0003] The present invention relates to a storage element comprising a storage layer for storing a magnetization state of a ferromagnetic layer and a magnetization fixed layer having a fixed magnetization direction, wherein the magnetization direction of the storage layer changes with the flow of electric current. The invention also relates to a memory comprising such a memory element, which is suitable for use in a non-volatile memory. Background technique [0004] A high-density DRAM capable of high-speed operation has been used as a random access memory in information equipment such as a computer. [0005] However, DRAM is volatile memory in which information disappears when power is re...

Claims

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Application Information

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IPC IPC(8): G11C11/16H01L43/08H01F10/32
CPCG11C11/16G11C11/161G11C11/1659H01L27/105
Inventor 山根一阳细见政功大森广之山元哲也肥后丰大石雄纪鹿野博司
Owner SONY CORP
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