Method and system for optimizing lithography focus and/or energy using a specially-designed optical critical dimension pattern

Abstract

This invention is related to a method and a system for optimizing lithography focus and / or energy using a specially-designed optical critical dimension pattern. After a wafer comprising a plurality of photo-masks is received, critical dimension, line-end shortening, and side wall angle of the plurality of photo-masks are measured by using an integrated metrology equipment; and a spectrum analysis is performed in a simulated spectra library to form analysis data; the analysis data is stored into a plurality of lookup tables of an optical critical dimension library which is performed to determine a focus or energy of the wafer. This invention provides a method and system capable of providing online measurement, and the measurement to the focus or energy can be processed on the scene; this invention is able to provide better data quality and resolution in the optical critical dimension database and provides early error alarm based on the analyzed data in order to be more practical and have utilization value on the production.

Description

technical field [0001] The present invention relates to a method and system for optimizing focus and / or energy of lithography, and in particular to a method and system for optimizing focus and / or energy of lithography by using a specially designed optical critical dimension pattern. Background technique [0002] In semiconductor process technology, when transferring a pattern from a reticle, energy is used to activate the photoresist. Traditionally, the source of this energy is provided by radiation, such as a UV light source. In addition, in the lithography process, focusing on this energy is also very important. Focus (Focus) is a state where the radiant energy of most individual radiant lights is concentrated on a single point. In general, lithographic energy can be monitored by viewing the critical dimension (CD) of the exposed pattern, while the lithographic focus direction can be monitored by viewing the line end shortening (LES) and sidewall angle (SWA). Line end s...

AI Technical Summary

Problems solved by technology

[0006] The main purpose of the present invention is to overcome the defects of existing lithography focusing and energy methods and systems thereof, and provide a new lithography focusing and / or energy optimization method and system thereof. The technical problem is to use specially designed optical critical dimension patterns to optimize the focus and / or energy of lithography to solve the problems of poor data quality and data resolution measured by existing processes, so as to be more suitable practical and has industrial value

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