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Production method of non-volatile memory cell

A non-volatile storage and control gate technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as sufficient cap layer, inability to make thickness, etc., to achieve good quality results

Inactive Publication Date: 2008-09-24
POWERCHIP SEMICON CORP
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Problems solved by technology

[0008] The main purpose of the present invention is to use high density plasma deposition (high density plasma, HDP) process to make the cap layer in the non-volatile memory unit, to solve the problem that cannot be produced due to the shrinking of the element size in the known method. Sufficient thickness of the cap layer, etc.

Method used

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  • Production method of non-volatile memory cell
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  • Production method of non-volatile memory cell

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Embodiment Construction

[0031] Please refer to Figure 2 to Figure 13 , Figure 2 to Figure 13 This is a schematic diagram of the process of manufacturing the non-volatile memory cell 50 according to the present invention. Such as figure 2 As shown, first, a substrate 52, such as a semiconductor substrate containing silicon material, is provided. The surface of the substrate 52 is provided with a liner layer 56, a mask layer 58 and includes at least one trench 60. The material of the mask layer 58 is, for example, silicon nitride, The method of forming the trench 60 is silicon carbide or silicon carbonitride, for example, using a photolithography etching process to remove part of the mask layer 58, the liner layer 56, and the substrate 52. Then, a tunnel oxide layer 62 is formed on the substrate 52 to cover the surface of the trench 60.

[0032] Then, like image 3 As shown, the trench 60 is filled with a conductive layer 64, such as a conductive material containing polysilicon material, and an etch-bac...

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Abstract

The invention provides a method for fabricating a nonvolatile storage unit. A substrate is firstly provided; wherein, a channel is formed; furthermore, the side wall of the channel sequentially forms a tunnel oxidation and a floating grid. A control grid is then formed in the channel and a high density plasma deposition process is carried out; the top of the control grid forms a high density plasma oxidation.

Description

Technical field [0001] The present invention relates to a method of manufacturing a storage unit, in particular to a method of a non-volatile storage unit. Background technique [0002] The non-volatile memory unit has the characteristics of re-erasable read and write, coupled with fast transmission and low power consumption, so the application level is very wide, so it has been widely used in portable products, becoming a lot of information, communication and consumer Essential components in electronic products. However, in order to provide lightweight and high-quality electronic component products, improving the component integration and quality of non-volatile memory has become the focus of the current development of the information industry and memory manufacturing industry. [0003] Please test figure 1 , figure 1 It is a known non-volatile memory storage unit 10 structure. The memory cell 10 is disposed on the substrate 12, and includes a control gate 14 disposed in a tre...

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Application Information

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IPC IPC(8): H01L21/336H01L21/8247
Inventor 吕威伯陈大川
Owner POWERCHIP SEMICON CORP
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