Novel anti-reflection conductive film

An anti-reflection and conductive film technology, applied in optics, instruments, optical components, etc., can solve the problems of low yield, complex process, high cost, etc., achieve the effect of small thickness, simplified process, and continuous batch production

Active Publication Date: 2008-10-01

陈培璋

11 Cites 36 Cited by

AI-Extracted Technical Summary

Problems solved by technology

Similarly, the thickness of the high-refractive index layer is thicker, which increases the number of targets and vacuum chambers, and the process of continuous production is complicated and unstable.

[0019] In summary, although ...

Method used

The film layer structure of invention is under the effect of considering visual anti-reflection, can adjust the film layer structure of anti-reflection film according to different...

Abstract

A novel antireflection conductive film has three different specific structures. The conductive film comprises a high refractive index layer (H), a low refractive index layer (L), a transparent conductive film (T), and/or an intermediate refractive index film (M). Each layer of film is arranged according to the regulation of L/H/S/H/L/T type, or (L/H)<2>/S/(H/L)<2>/T type or L/M/H/S/H/M/L/T to form a multi-layer composite film. The thickness of each film layer of the novel antireflection conductive film according to the invention is smaller. The producing technique can be simplified and the invention is suitable for the continuous batch production and is especially suitable for producing antireflection conductive film with large area. The invention can be widely used as the antireflection film on optical glass or transparent plastic based material, and has a wide application in liquid crystal display, cathode ray tube, architectural glass, panel of touch screen, wave filter of screen and the like.

Application Domain

CoatingsOptical elements

Technology Topic

Architectural glassElectrically conductive +7

Image

Examples

Experimental program(3)

Example Embodiment

[0040] Embodiment 1: L/H/S/H/L/T type anti-reflection conductive film of the present invention

[0041] The specific film features of the L/H/S/H/L/T type anti-reflection conductive film of the present invention are:

[0042] The high refractive index layer (H) uses TiO 2 , the refractive index index of the material at 530-570nm is 2.1-2.4;

[0043] The low refractive index layer (L) is made of SiO 2 , the refractive index of the material at 530-570nm is 1.4-1.5;

[0044] The substrate material (S) is selected from glass, and the refractive index in the visible range is 1.51-1.56;

[0045] The transparent conductive film (T) is made of ITO, and the refractive index in the visible light range is between 1.85-1.95;

[0046] The thickness of each layer is designed as follows:

[0047]

[0048] refer to figure 1 , the reflection color of this film layer is light blue, and the reflectance value at the wavelength of 530nm-570nm can reduce the reflectivity of the original substrate by 8.5%. Due to the small thickness of the high-refractive index material, such thickness and film layer structure can reduce the cavity of the vacuum continuous coating machine, and the process is simple, and it is easier to realize mass continuous production. The following is the basic process flow for producing this anti-reflection conductive film.

[0049] The film layer of the present invention is produced by continuous magnetron sputtering or evaporation and batch sputtering or evaporation, especially the method of continuous magnetron sputtering coating. The specific example manufacturing steps of continuous magnetron sputtering method are as follows:

[0050] The glass continuous sputtering coating process needs to go through glass slicing, edging, chamfering, glass cleaning, coating and testing. The coating is carried out according to the following process scheme:

[0051] (1) Use the method of DC planar magnetron sputtering to sputter the coated glass substrate. The target material used during sputtering is a Ti target, and Ar and O are introduced into the vacuum chamber at the same time. 2 Reactive sputter coating to form high refractive index TiO 2 film layer. The substrate glass is 60mm-120mm away from the target surface, and the heater is used to keep the substrate temperature of the glass at 100°C-300°C, and the working pressure in the coating machine cavity is 0-10mTorr.

[0052] (2) Use the method of AC reactive planar magnetron sputtering to sputter the coated glass substrate. The target material used in sputtering is Si target, and Ar and O are simultaneously introduced into the vacuum chamber. 2 Reactive sputter coating for low refraction

[0053] Rate of SiO 2 film layer. The substrate glass is 60mm-120mm away from the target surface, and the heater is used to keep the substrate temperature of the glass at 100°C-300°C, and the working pressure in the coating machine cavity is 0-10mTorr.

[0054] (3) Use DC or DC pulse magnetron sputtering to sputter the coated glass substrate. The material used during sputtering is an ITO target. Ar is introduced into the vacuum chamber for sputter coating to form an ITO film. The substrate glass is 60mm-120mm away from the target surface, and the heater is used to keep the substrate temperature of the glass at 100°C-300°C, and the working pressure in the coating machine cavity is 0-10mTorr.

[0055] (4) In order to realize the continuous sputtering process, it is necessary to arrange multiple target materials at the same time, and place them in different vacuum chambers to coordinate the simultaneous work of multiple targets to stabilize the process.

Example Embodiment

[0056] Embodiment 2: (L/H) of the present invention 2 /S/(H/L) 2 /T type anti-reflection conductive film

[0057] (L/H) of the present invention 2 /S/(H/L) 2 The /T type anti-reflection conductive film has a 9-layer structure with a large number of layers, but this structure can realize a variety of colors, so that the required color can be adjusted according to the needs. The specific film layer features are:

[0058] The high refractive index layer (H) uses TiO 2 , the refractive index index of the material at 530-570nm is 2.1-2.4;

[0059] The low refractive index layer (L) is made of SiO 2 , the refractive index of the material at 530-570nm is 1.4-1.5;

[0060] The substrate material (S) is selected from glass, and the refractive index in the visible range is 1.51-1.56;

[0061] The transparent conductive film (T) is made of ITO, and the refractive index in the visible light range is between 1.85-1.95;

[0062] The thickness of each layer is designed as follows:

[0063]

[0064] refer to figure 2 , the reflection color of this film layer is red, and the reflectance value at the wavelength of 530nm-570nm can reduce the reflectivity of the original substrate by 8.8%. Since the thickness of the high-refractive index material is small, the process is relatively stable, and it is easy to realize mass continuous production.

[0065] When the thickness of each layer is designed as shown in the table below, the reflection color of this film layer is light blue, and the reflectance value at the wavelength of 530-570nm can reduce the reflectance of the original substrate by 8.8%.

[0066]

[0067] The basic technological process of the anti-reflective conductive film is roughly the same as that of the first film layer structure example, including glass slicing, edging, chamfering, glass cleaning, coating and testing. The difference lies in the arrangement of the vacuum coating target material and the arrangement of the vacuum cavity.

Example Embodiment

[0068] Embodiment 3: L/M/H/S/H/M/L/T type anti-reflection conductive film of the present invention

[0069] In the L/M/H/S/H/M/L/T type anti-reflection conductive film structure of the present invention, there is an extra layer of middle refractive index layer (M). This structure can realize a more stable process, and the specific film Layer features are:

[0070] The high refractive index layer (H) uses TiO 2 , the refractive index index of the material at 530nm-570nm is 2.1-2.4;

[0071] Middle refractive index layer (M), when the material is 530nm-570nm, the refractive index is 1.6-1.7;

[0072] The low refractive index layer (L) is made of SiO 2 , the refractive index of the material at 530-570nm is 1.4-1.5;

[0073] The substrate material (S) is selected from glass, and the refractive index in the visible range is 1.51-1.56;

[0074] The transparent conductive film (T) is made of ITO, and the refractive index in the visible light range is between 1.85-1.95;

[0075] The thickness of each layer is designed as follows

[0076]

[0077] refer to image 3 , the reflection color of this film layer is blue, and the reflectance value at the wavelength of 530nm-570nm can reduce the reflectivity of the original substrate by 8.6%. Since the thickness of the high-refractive index layer and the medium-refractive index layer is small, the process is relatively stable, and it is easy to realize mass continuous production.

PUM

Property	Measurement	Unit
Thickness	5.0 ~ 30.0	nm
Thickness	60.0 ~ 120.0	nm
Thickness	5.0 ~ 40.0	nm

Description & Claims & Application Information

We can also present the details of the Description, Claims and Application information to help users get a comprehensive understanding of the technical details of the patent, such as background art, summary of invention, brief description of drawings, description of embodiments, and other original content. On the other hand, users can also determine the specific scope of protection of the technology through the list of claims; as well as understand the changes in the life cycle of the technology with the presentation of the patent timeline. Login to view more.

Classification and recommendation of technical efficacy words

Simple process
reduce thickness

Novel anti-reflection conductive film

An anti-reflection and conductive film technology, applied in optics, instruments, optical components, etc., can solve the problems of low yield, complex process, high cost, etc., achieve the effect of small thickness, simplified process, and continuous batch production

AI-Extracted Technical Summary

Problems solved by technology

Method used

Abstract

Image

Examples

Example Embodiment

Example Embodiment

Example Embodiment

PUM

Description & Claims & Application Information

Similar technology patents

Optical functional film, production method thereof, and polarizing plate and image display device using the same

Novel floating build floor and its construction method

Backlight assembly, liquid crystal display apparatus having the same and method thereof

Organic light emitting diode touch control display panel

Micromachined piezoelectric ultrasound transducer arrays

Classification and recommendation of technical efficacy words

Multimedia data recording apparatus, monitor system, and multimedia data recording method

Simultaneously desulfurization and denitration wet ammonia flue gas cleaning technology and system thereof

Method for recycling metal oxide from waste flue gas denitration catalyst

Method for removing COS from a stream of hydrocarbon fluid and wash liquid for use in a method of this type

Method for preparing graphite alkyne film

Impermanent biocompatible fastener

Light-emitting device and method for manufacturing the same

Solid-state imaging device and method for manufacturing solid-state imaging device

Display device and method for manufacturing the same

Optical display device having polarizing film