Plasma processing device, plasma processing method and storage medium

A plasma and processing device technology, applied in the field of plasma processing devices, can solve labor and time-consuming problems and achieve good plasma processing effects
CN101277579AActive Publication Date: 2008-10-01TOKYO ELECTRON LTD
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
TOKYO ELECTRON LTD
Publication Date
2008-10-01

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Abstract

The present invention provides a plasma processing device and a plasma processing method. In the plasma processing device disposed with an impedance regulating part between the anode electrode and the processing capacitor, the impedance of the impedance regulating part can be regulated easily and properly, to inhibit abnormal discharge. The plasma processing device includes: a high frequency power source for voltage bias; an impedance regulating part; a voltage measuring part for measuring the voltage of the impedance regulating part; a band-pass filter between the impedance regulating part and the voltage measuring part; and a control part, changing the impedance value of the impedance regulating part when the plasma generates, meanwhile obtaining the voltage value measured by the voltage measuring part, according to the voltage value, calculating the current value flowing into the anode electrode, so that the current value becomes maximum or the impedance value of the impedance regulating part is set by neighbouring manners.
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Description

technical field

[0001] The present invention relates to a plasma processing apparatus, a plasma processing method, and a storage medium that plasmaize a processing gas with high-frequency power, and perform processing such as etching on a substrate using the plasma. Background technique

[0002] In the manufacturing process of flat panels such as semiconductor devices and liquid crystal display devices, plasma etching equipment and plasma CVD film formation equipment are used to perform processes such as etching and film formation on substrates such as semiconductor wafers and glass substrates. and other plasma processing equipment.

[0003] As a plasma processing apparatus, a parallel plate type capacitively coupled plasma processing apparatus is generally used. Figure 11 It is an equivalent circuit in such a plasma processing apparatus, and the wall part of the processing apparatus 11 has an inductance component with respect to a high frequency. Therefore, when plasma is...

Claims

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