Plasma processing device, plasma processing method and storage medium

A plasma and processing device technology, applied in the field of plasma processing devices, can solve labor and time-consuming problems and achieve good plasma processing effects

Active Publication Date: 2008-10-01
TOKYO ELECTRON LTD
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Problems solved by technology

And while the operator of the device manually changes the electrostatic capacity of the variable capacitor 17b, he uses the above-mentioned probes 18a, 18a, the computer 18, and the broadband oscilloscope 18b to measure the distance between the variable capacitor 17b and the high-frequency power supply 14 at each position of the variable capacitor 17b. Calculate the cur

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  • Plasma processing device, plasma processing method and storage medium
  • Plasma processing device, plasma processing method and storage medium
  • Plasma processing device, plasma processing method and storage medium

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Embodiment Construction

[0059] Refer below figure 1 , an embodiment in which the plasma processing apparatus of the present invention is applied to an apparatus for etching a glass substrate 10 for a liquid crystal display will be described. The plasma etching apparatus 2 has, for example, an angular tube-shaped processing container 20 made of aluminum whose surface has been anodized. A lower electrode 31 is provided at the lower center of the processing chamber 20 , and the lower electrode 31 also serves as a mounting table for placing the substrate 10 conveyed into the processing chamber 20 by a conveyance mechanism not shown. An insulator 32 is provided on the lower portion of the lower electrode 31 along the opening edge of a matching box (described later). The lower electrode 31 is sufficiently electrically floating from the processing container 20 by the insulator 32 . A matching box 34 extending downward through the opening 21 formed in the bottom wall of the processing container 20 is prov...

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Abstract

The present invention provides a plasma processing device and a plasma processing method. In the plasma processing device disposed with an impedance regulating part between the anode electrode and the processing capacitor, the impedance of the impedance regulating part can be regulated easily and properly, to inhibit abnormal discharge. The plasma processing device includes: a high frequency power source for voltage bias; an impedance regulating part; a voltage measuring part for measuring the voltage of the impedance regulating part; a band-pass filter between the impedance regulating part and the voltage measuring part; and a control part, changing the impedance value of the impedance regulating part when the plasma generates, meanwhile obtaining the voltage value measured by the voltage measuring part, according to the voltage value, calculating the current value flowing into the anode electrode, so that the current value becomes maximum or the impedance value of the impedance regulating part is set by neighbouring manners.

Description

technical field [0001] The present invention relates to a plasma processing apparatus, a plasma processing method, and a storage medium that plasmaize a processing gas with high-frequency power, and perform processing such as etching on a substrate using the plasma. Background technique [0002] In the manufacturing process of flat panels such as semiconductor devices and liquid crystal display devices, plasma etching equipment and plasma CVD film formation equipment are used to perform processes such as etching and film formation on substrates such as semiconductor wafers and glass substrates. and other plasma processing equipment. [0003] As a plasma processing apparatus, a parallel plate type capacitively coupled plasma processing apparatus is generally used. Figure 11 It is an equivalent circuit in such a plasma processing apparatus, and the wall part of the processing apparatus 11 has an inductance component with respect to a high frequency. Therefore, when plasma is...

Claims

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Application Information

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IPC IPC(8): H05H1/46H01J37/32H01L21/00
CPCH01J37/32183H01J37/32495H01J37/32559H05H1/46H05H1/4652H05H2242/20
Inventor 东条利洋齐藤均佐藤亮
Owner TOKYO ELECTRON LTD
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