Plasma processing device, plasma processing method and storage medium

Abstract

The present invention provides a plasma processing device and a plasma processing method. In the plasma processing device disposed with an impedance regulating part between the anode electrode and the processing capacitor, the impedance of the impedance regulating part can be regulated easily and properly, to inhibit abnormal discharge. The plasma processing device includes: a high frequency power source for voltage bias; an impedance regulating part; a voltage measuring part for measuring the voltage of the impedance regulating part; a band-pass filter between the impedance regulating part and the voltage measuring part; and a control part, changing the impedance value of the impedance regulating part when the plasma generates, meanwhile obtaining the voltage value measured by the voltage measuring part, according to the voltage value, calculating the current value flowing into the anode electrode, so that the current value becomes maximum or the impedance value of the impedance regulating part is set by neighbouring manners.

Description

technical field [0001] The present invention relates to a plasma processing apparatus, a plasma processing method, and a storage medium that plasmaize a processing gas with high-frequency power, and perform processing such as etching on a substrate using the plasma. Background technique [0002] In the manufacturing process of flat panels such as semiconductor devices and liquid crystal display devices, plasma etching equipment and plasma CVD film formation equipment are used to perform processes such as etching and film formation on substrates such as semiconductor wafers and glass substrates. and other plasma processing equipment. [0003] As a plasma processing apparatus, a parallel plate type capacitively coupled plasma processing apparatus is generally used. Figure 11 It is an equivalent circuit in such a plasma processing apparatus, and the wall part of the processing apparatus 11 has an inductance component with respect to a high frequency. Therefore, when plasma is...

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Problems solved by technology

And while the operator of the device manually changes the electrostatic capacity of the variable capacitor 17b, he uses the above-mentioned probes 18a, 18a, the computer 18, and the broadband oscilloscope 18b to measure the distance between the variable capacitor 17b and the high-frequency power supply 14 at each position of the variable capacitor 17b. Calculate the current [I-total] flowing into the upper electrode 12 based on the voltage waveform data with a corresponding frequency, and visually observe the formed plasma, and determine the available current value based on the visually observed discharge state and the calculated above-mentioned current value. The electrostatic capacity of variable capacitor 17b requires labor and time

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