LED apparatus

Abstract

The invention discloses a light emitting diode (LED) device which includes a heat-dissipating baseplate, a sandwich structure, an epitaxial lamination, a first contact electrode and a second contact electrode, wherein, the sandwich structure includes a reflecting layer, a patterning insulated heat conducting layer and a transparent conducting layer, and the patterning insulated heat conducting layer is arranged between the reflecting layer and the transparent conducting layer. The sandwich structure is positioned between the heat-dissipating baseplate and the epitaxial lamination so as to lead current to be centralized to flow to the reflecting layer or the transparent conducing layer and then be diffused evenly by the transparent conducting layer. The epitaxial lamination includes a first semiconductor layer, a luminous layer and a second semiconductor layer, wherein, the first contact electrode is electrically connected with the first semiconductor layer, while the second contact electrode is electrically connected with the second semiconductor layer.

Description

technical field [0001] The invention relates to an electroluminescent device, in particular to a light emitting diode device. Background technique [0002] A light emitting diode (Light Emitting Diode, LED) is a kind of luminescent light-emitting element, which utilizes the energy released by the combination of electrons and holes in a semiconductor material, and releases it in the form of light. Depending on the material used, it can emit monochromatic light of different wavelengths. It can be mainly divided into two types: visible light-emitting diodes and invisible light (infrared) light-emitting diodes. Compared with traditional light bulbs, light-emitting diodes have the advantages of power saving, shock resistance and fast flashing speed, so they become indispensable in daily life. important components. [0003] Please refer to figure 1 , a known light emitting diode element 10 includes an epitaxial substrate 100 , a first semiconductor layer 101 , a light emitting ...

AI Technical Summary

Problems solved by technology

However, since the material of the reflective layer 206 is mostly selected from metal materials, there is a phenomenon of high Schottky barrier (Schotty barrier) at the junction formed between it and the second semiconductor layer 203, causing the resistance value to be too high to make the current flow difficult. Uniform diffusion, that is, a current embolism is caused at the junction, which further increases the operating voltage of the LED device 2, and the resulting heat accumulation also causes more serious heat dissipation problems because there is no path to conduct to the outside world.

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