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Thin-film transistor substrate and manufacturing method thereof

A technology of thin film transistor and manufacturing method, applied in the direction of transistor, semiconductor/solid-state device manufacturing, electric solid-state device, etc.

Inactive Publication Date: 2010-09-29
INNOCOM TECH (SHENZHEN) CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In order to solve the above-mentioned problem of large leakage current of the thin film transistor substrate, it is necessary to provide a thin film transistor substrate with small leakage current

Method used

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  • Thin-film transistor substrate and manufacturing method thereof
  • Thin-film transistor substrate and manufacturing method thereof
  • Thin-film transistor substrate and manufacturing method thereof

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Embodiment Construction

[0034] see figure 2 , is a partial cross-sectional structure schematic diagram of the first embodiment of the thin film transistor substrate of the present invention. The TFT substrate 200 includes a glass substrate 201, a gate 202 on it, a gate insulating layer 203 on the gate 202 and the glass substrate 201, a non-conductor on the gate insulating layer 203. crystalline silicon pattern 204, a heavily doped amorphous silicon pattern 205 located on the amorphous silicon pattern 204, a source 206 and a drain 207 located on the heavily doped amorphous silicon pattern 205 and the gate insulating layer 203 , a passivation layer 208 on the source electrode 206 , the drain electrode 207 and the gate insulating layer 203 , and a transparent conductive layer pattern 209 on the passivation layer 208 .

[0035] The transparent conductive layer pattern 209 is electrically connected to the drain 207 through a through hole 211 penetrating through the passivation layer 208 . A slit 210 wi...

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Abstract

The invention provides a thin-film transistor substrate and a manufacturing method thereof. The thin-film transistor substrate comprises a substrate; a grid electrode formed on the substrate; a grid electrode insulating layer formed on the grid electrode and the substrate; a non-crystalline silicon pattern formed on the grid electrode insulating layer; a heavily doped non-crystalline silicon pattern formed on the non-crystalline silicon pattern; and a source electrode and a drain electrode formed on the heavily doped non-crystalline silicon pattern and the grid electrode insulating layer; wherein the non-crystalline silicon pattern comprises a high-resistance portion with resistance higher than the resistance of other portions of the non-crystalline silicon pattern.

Description

technical field [0001] The invention relates to a thin film transistor substrate and a manufacturing method thereof. Background technique [0002] At present, liquid crystal displays are gradually replacing traditional cathode ray tube (Cathode Ray Tube, CRT) displays used in calculators, and because liquid crystal displays are light, thin, and small, they are widely used in desktop computers and laptops. Type computers, personal digital assistants (Personal Digital Assistant, PDA), portable phones, televisions and a variety of office automation and audio-visual equipment. The liquid crystal panel is its main component, which generally includes a thin film transistor substrate, a color filter substrate and a liquid crystal layer sandwiched between the thin film transistor substrate and the color filter substrate. [0003] see figure 1 , is a schematic diagram of a partial structure of a thin film transistor substrate disclosed in the prior art. The TFT substrate 100 inclu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/786H01L29/02H01L27/12H01L21/336H01L21/20H01L21/268H01L21/84G02F1/1362
CPCH01L29/78618H01L27/1214H01L29/66765H01L29/78696H01L29/78669
Inventor 许志杰颜硕廷
Owner INNOCOM TECH (SHENZHEN) CO LTD