Unlock instant, AI-driven research and patent intelligence for your innovation.

Monitoring structure for semiconductor metallic silicides

A metal silicide and semiconductor technology, applied in the direction of semiconductor devices, semiconductor/solid-state device testing/measurement, semiconductor/solid-state device components, etc., can solve the problems of large semiconductor operating speed and drop, so as to ensure the quality of formation and facilitate operation , the effect of simple structure

Inactive Publication Date: 2009-01-21
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, the formation quality of the above-mentioned metal silicides has a decisive impact on the performance of semiconductor devices. For example, when the metal silicides in the active area sandwiched between two polysilicon lines are not well formed, the measured active resistance value will be will be quite large and the operating speed of the semiconductor will drop, so it is necessary to set up a monitoring structure to monitor the quality of metal silicide formation

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Monitoring structure for semiconductor metallic silicides
  • Monitoring structure for semiconductor metallic silicides

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0019] The monitoring structure of the semiconductor metal silicide of the present invention will be further described in detail below.

[0020] exist figure 1 Among them, the active region 2 is sandwiched between two polysilicon lines 1a, 1b, and the distance between the two polysilicon lines 1a, 1b adopts the minimum design principle, and the polysilicon lines 1a, 1b overlap with the active region 2 to a certain extent. The source region 2 consists of metal silicide. Both ends of the active area 2 are connected to the monitoring structure of the metal silicide, that is, the active area 2 uses a plurality of through holes 4a, 4b, 4c, 4d to connect the metal silicide to the two metal lines 3a, 3b, and then The metal wires 3a, 3b are connected to an external testing device (not shown) such as a multimeter, through which the active resistance value sandwiched between the metal wires 3a, 3b can be measured. When the silicide formation of the active region 2 sandwiched between t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a monitoring structure of a semiconductor metallic silicide, which comprises a plurality of through-holes which are positioned in the metallic silicide, and metallic wires which are connected with the through-holes. With the monitoring structure of the semiconductor metallic silicide, an active resistance, a drain current and the like in an active region of a semi-conductor can be monitored, and thereby the forming quality of the metallic silicide can be guaranteed.

Description

technical field [0001] The invention relates to a semiconductor monitoring structure, in particular to a semiconductor metal silicide quality monitoring structure. Background technique [0002] In modern VLSI chips, the high level of integration of semiconductor devices results in reduced widths of conductive leads (eg, gate electrodes or bit electrodes), and as the width of the conductive leads decreases, their corresponding resistance increases. For example, as the width of conductive leads is reduced to 1 / N, their resistance increases by N times, and the increase in resistance results in a decrease in the operating speed of the semiconductor device. [0003] For gates or bit lines used as semiconductor devices, doped polysilicon lines are generally used, but such doped polysilicon lines exhibit a high sheet resistance of 30-70 ohms / cm2 and each contact is about 30-70 High contact resistance in ohms / cm2. [0004] In order to reduce such high surface and contact resistanc...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/544
CPCH01L2924/0002H01L22/34
Inventor 曹立何军黄圣扬
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP