Volatile memory elements with elevated power supply levels for programmable logic device integrated circuits

Abstract

Integrated circuits are provided that have volatile memory elements. The memory elements produce output signals. The integrated circuits may be programmable logic device integrated circuits containing programmable core logic including transistors with gates. The core logic is powered using a core logic power supply level defined by a core logic positive power supply voltage and a core logic ground voltage. When loaded with configuration data, the memory elements produce output signals that are applied to the gates of the transistors in the core logic to customize the programmable logic device. The memory elements are powered with a memory element power supply level defined by a memory element positive power supply voltage and a memory element ground power supply voltage. The memory element power supply level is elevated with respect to the core logic power supply level.

Description

[0001] [0001] This application claims priority to US Patent Application Serial No. 11 / 282,437, filed November 17, 2005. technical field [0002] [0002] The present invention relates to volatile memory cells, and more particularly, to volatile memory cells operating at elevated power supply levels on integrated circuits, such as programmable logic device integrated circuits. Background technique [0003] [0003] Integrated circuits typically contain volatile memory cells. Typical volatile memory cells are based on cross-coupled inverters (latch) and are used to store data. Each memory cell can store a single bit of data. [0004] [0004] Volatile memory cells are often used to store configuration data in programmable logic devices. A programmable logic device is an integrated circuit that can be customized in small batches to realize the desired logic design. In a typical approach, a PLD manufacturer pre-designs and manufactures an off-the-shelf PLD integrated circuit. Logi...

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If the PMOS transistor is not fully turned off, an undesired leakage current will result

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