Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Organic thin-film transistor and manufacture method thereof

A technology of organic thin film and transistor, which is applied in the field of organic thin film transistor and its preparation, can solve the disadvantages of large-scale production of organic thin film transistor, etc., and achieve the effects of easy tailoring and processing, improved performance and novel structure

Inactive Publication Date: 2009-02-04
UNIV OF ELECTRONIC SCI & TECH OF CHINA
View PDF0 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This process requires a high temperature environment and high temperature equipment, which is unfavorable for large-scale production of organic thin film transistors

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Organic thin-film transistor and manufacture method thereof
  • Organic thin-film transistor and manufacture method thereof
  • Organic thin-film transistor and manufacture method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] Such as figure 1 In the structure shown, substrate 1 is made of Si substrate, gate electrode 2 is made of DC magnetron sputtered ITO transparent conductive film, ultraviolet curing adhesive is used as organic gate insulating layer 3, source electrode 5 is made of Cr metal film as electrode layer, and leakage current Electrode 6 also uses Cr metal thin film as an electrode layer, and organic semiconductor layer 4 uses pentacene pentance.

[0047] The preparation method is as follows:

[0048] ① Thoroughly clean the Si substrate first, and blow dry with dry nitrogen after cleaning;

[0049] ② Evaporate the gate electrode on the surface of the Si substrate by DC magnetron sputtering;

[0050] ③Etching the ITO gate electrode pattern by photolithography;

[0051] ④ On the Si substrate plated with the gate electrode, spin-coat the UV-curable adhesive organic gate insulating layer by spin-coating;

[0052] ⑤ Carrying out ultraviolet curing and heating and baking the formed...

Embodiment 2

[0057] Such as figure 1 In the structure shown, substrate 1 is made of Si substrate, gate electrode 2 is made of DC magnetron sputtered ITO transparent conductive film, ultraviolet curing adhesive is used as organic gate insulating layer 3, source electrode 5 is made of Cr metal film as electrode layer, and leakage current The electrode 6 also adopts Cr metal thin film as an electrode layer, and the organic semiconductor layer 4 adopts CuPc.

[0058] The fabrication process of the device is similar to that of Example 1.

Embodiment 3

[0060] Such as figure 2 In the structure shown, substrate 1 is made of Si substrate, gate electrode 2 is made of DC magnetron sputtered ITO transparent conductive film, ultraviolet curing adhesive is used as organic gate insulating layer 3, source electrode 5 is made of Cr metal film as electrode layer, and leakage current The electrode 6 also uses Cr metal thin film as the electrode layer, and the organic semiconductor layer 4 uses pentacene.

[0061] The preparation method is as follows:

[0062] ① Thoroughly clean the Si substrate first, and blow dry with dry nitrogen after cleaning;

[0063] ② Evaporate the gate electrode on the surface of the Si substrate by DC magnetron sputtering;

[0064] ③Etching the ITO gate electrode pattern by photolithography;

[0065] ④ On the Si substrate plated with the gate electrode, spin-coat the UV-curable adhesive organic gate insulating layer by spin-coating;

[0066] ⑤ Carrying out ultraviolet curing and heating and baking the forme...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses an organic thin-film transistor, comprising a baseplate, a gate electrode, an insulating layer, an organic semiconductor layer, a drain electrode and a source electrode. The organic thin-film transistor is in top-contact structure, or bottom-contact structure or top-gate type structure and is characterized in that the insulating layer is the combination of one or more materials which need UV curing. The invention aims at optimizing the fabrication process of the thin-film transistor, improving the property of the organic thin-film transistor and reducing the cost of the thin-film transistor by a large margin so as to largely reduce technique requirements and production cost in industrial production of the organic thin-film transistors and to improve rate of quality transistors.

Description

technical field [0001] The invention relates to the technical field of thin film transistors, in particular to an organic thin film transistor and a preparation method thereof. Background technique [0002] With the spread of information terminals, the demand for flat panel displays as displays for computers is increasing. In addition, with the progress of informatization, there are more opportunities to provide information that was previously provided on paper media in electronic form, and the demand for electronic documents or digital documents as thin, light, and portable display media is increasing. . [0003] Generally, in a flat-panel display device, elements such as liquid crystal, organic EL, and electrophoresis are used to form a display medium. In addition, for such display media, in order to ensure the uniformity of screen luminance and the speed of screen writing transition, etc., the technology of using active drive elements composed of thin film transistors (...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L51/05H01L51/30H01L51/40
Inventor 于军胜李璐蒋亚东张磊
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com