Organic opto-electronic device with composite protection layer and preparation method thereof

A technology for optoelectronic devices and protective layers, which is applied in the field of organic optoelectronic devices with composite protective layers and its preparation, can solve the problems of poor density and oxidation resistance of polymer packaging layers, insufficient smoothness of the surface, and low mechanical strength, etc., to achieve The effect of light weight, small size and reduced production cost

Inactive Publication Date: 2009-02-18
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It is generally believed that metal has the best water molecule barrier ability, thermal conductivity and electrical shielding properties, but it is opaque and the surface is not smooth enough; glass has excellent chemical stability, oxidation resistance, electrical insulation and compactness, but mechanical Low strength and brittleness; while the density and oxidation resistance of the polymer encapsulation layer are far inferior to those of metal and glass, further improvement is needed

Method used

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  • Organic opto-electronic device with composite protection layer and preparation method thereof
  • Organic opto-electronic device with composite protection layer and preparation method thereof
  • Organic opto-electronic device with composite protection layer and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0059] like figure 1 As shown, the substrate 1 in the structure of the device, the organic optoelectronic device 2 is an organic electroluminescence device, an organic material layer 31 , an organic material layer 41 , an inorganic material layer 51 , and a combination layer 61 .

[0060] The substrate 1 of the device is PET, an organic electroluminescent device, the inorganic material layer 31 is silicon nitride, the organic material layer 41 is UV glue, and the inorganic material layer 51 is silicon nitride.

[0061] The preparation method is as follows:

[0062] ① Prepare an inorganic material layer silicon nitride 300nm on the upper layer of the organic electroluminescent device;

[0063] ② Evaporate or spin-coat a layer of organic material layer UV glue 300nm on the above inorganic material layer silicon nitride;

[0064] ③ Deposit a layer of inorganic material layer silicon nitride 300nm on the above organic material layer UV glue;

[0065] ④ Repeat the above steps ① ...

Embodiment 2

[0067] like figure 2 As shown, the substrate 1 in the structure of the device, the organic optoelectronic device 2 is an organic thin film transistor, an inorganic material layer 32 , an organic material layer 42 , an inorganic material layer 52 , and a combined layer 62 .

[0068] The substrate 1 of the device is PET, organic thin film transistor, the inorganic material layer 32 is silicon nitride, the organic material layer 42 is UV glue, and the inorganic material layer 52 is silicon nitride.

[0069] The fabrication process of the device is as follows:

[0070] ① Prepare an inorganic material layer silicon nitride 300nm on the upper layer of the substrate;

[0071] ② Prepare a layer of organic material layer UV glue 300nm on the above inorganic material layer silicon nitride;

[0072] ③ Deposit a layer of inorganic material layer silicon nitride 300nm on the above organic material layer UV glue;

[0073] ④Repeat the above steps ①~③, and then prepare a thin film layer c...

Embodiment 3

[0076] like image 3 As shown, the substrate 1 in the structure of the device, the organic optoelectronic device 2 is an organic solar cell, an inorganic material layer 33 , an organic material layer 43 , an inorganic material layer 53 , and a combination layer 63 .

[0077] The substrate 1 of the device is PET, an organic solar cell, the inorganic material layer 33 is silicon nitride, the organic material layer 43 is UV glue, and the inorganic material layer 53 is silicon nitride.

[0078] The fabrication process of the device is similar to that of Example 2.

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Abstract

This invention discloses an organic photoelectron component with composite protective layer, including a substrate, an organic photoelectron component and a composite protective layer consisting of n combined layers, wherein n is the integer and is not smaller than 1 and not greater than 100. The combined layer is composed of three modes: an inorganic material layer/organic material layer/inorganic material layer or an inorganic material layer/organic material layer or organic material layer/inorganic material layer. The position relationship of the combined layers in the protective layer includes: setting at one position or multiple positions of the upper layer, the lower layer, the periphery of the organic photoelectron component; setting between the substrate and the organic photoelectron component or at one side of the substrate. This component improves the property of the organic photoelectron component, greatly reduces the cost of the organic photoelectron component, and reduces the technical command and cost for the industrialization of the organic photoelectron component.

Description

technical field [0001] The invention relates to the technical field of organic optoelectronic devices, in particular to an organic optoelectronic device with a composite protective layer and a preparation method thereof. Background technique [0002] With the rapid development of information technology, profound changes have taken place in the field of information display. People have higher and higher requirements for display image quality and portability. Various new flat panel display technologies are emerging, such as liquid crystal display, plasma display , field emission display, organic electroluminescent display, etc., have driven the leapfrog development of the display industry. Among them, organic electroluminescent display and its display device (OLED) have advantages that other display technologies cannot match, such as thinner and lighter, active light emission, low energy consumption, wide viewing angle, high luminous brightness, high contrast, fast response sp...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/00H01L51/42H01L51/44H01L51/46H01L51/48H01L51/50H01L51/52H01L51/54H01L51/56H01L51/05H01L51/10H01L51/30H01L51/40
CPCY02E10/549
Inventor 于军胜李璐蒋亚东唐晓庆
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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