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Compositions and methods for cmp of indium tin oxide surfaces

A technology of indium tin oxide and chemical machinery, applied in the field of CMP, can solve the problem of reducing the surface roughness of ITO, and achieve the effect of low surface roughness

Inactive Publication Date: 2009-02-18
CABOT MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although existing methods still leave room for improvement, chemical mechanical polishing (CMP) has been investigated to reduce the surface roughness of ITO

Method used

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  • Compositions and methods for cmp of indium tin oxide surfaces
  • Compositions and methods for cmp of indium tin oxide surfaces

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] This example illustrates the performance of conventional CMP compositions for removing ITO from substrates compared to compositions of the present invention.

[0031] Using a Betalap or FK-N1 polishing pad on a Hyprez table polisher, polish with ITO at a platen speed of 45 to 65 rpm, a gripper speed of 40 to 60 rpm, a downforce of 0.3 to 1.75 psi, and a slurry flow rate of 40 ml / min. Surface layer (1500 deposited on glass substrate ITO) wafers (4 inches by 4 inches). The CMP slurry compositions evaluated had the formulations shown below.

[0032] Slurry A: 12% by weight fumed silica (average particle size of 140 nm, 90 m 2 / g surface area). The pH of the slurry was adjusted to 10 with potassium hydroxide.

[0033] Slurry B: 5% by weight colloidal silica (average particle size of 75nm, 80m 2 / g surface area). The pH of the slurry was adjusted to 10 with potassium hydroxide.

[0034] Slurry C: 0.5% by weight ceria (average particle size of 80 nm, 60 m 2 / g surfac...

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Abstract

The present invention provides chemical-mechanical polishing (CMP) compositions and methods for polishing an ITO surface. The compositions of the invention comprise a particulate zirconium oxide or colloidal silica abrasive, which has a mean particle size of not more than 150 nm, suspended in an aqueous carrier, which preferably has a pH of not more than 5. Preferably, the abrasive has a surface area in the range of 40 to 220 m<2> / g. The CMP compositions of the invention provide an acceptably low surface roughness when used to polish an ITO surface, providing clean and uniform surfaces.

Description

technical field [0001] The present invention relates to polishing compositions and methods of polishing substrates using the compositions. More particularly, the present invention relates to a chemical mechanical polishing composition suitable for polishing a substrate comprising indium tin oxide (ITO) and a CMP method using the same. Background technique [0002] Thin films of indium tin oxide ("ITO") are highly conductive and have high light transmission. Flat panel display devices typically utilize a thin layer of ITO that substantially covers the surface of the panel. The ITO layer is configured to have an equipotential surface and to have a conductivity lower than that of the solid metal sheet. ITO is also used as a transparent electrode to construct organic light emitting diode (OLED) devices, as a window material for solar cells, and as an antistatic film. [0003] The generally high surface roughness of ITO along with non-uniformities such as spikes, scratches, an...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K3/14
CPCC09G1/02H01L51/5206H01L51/442Y02E10/50H01L31/1884C09K3/1463H10K30/82H10K50/81C09K3/14
Inventor 菲利普·卡特内文·纳吉布弗雷德·孙
Owner CABOT MICROELECTRONICS CORP