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Stress simulation experiment structure of infrared detector focal plane component

A detector component and infrared focal plane technology, applied in the direction of measuring force, instrument, measuring device, etc., can solve the problem of additional thermal mismatch and achieve the effect of improving accuracy

Inactive Publication Date: 2009-02-25
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of this invention is to design a stress simulation test structure to solve the technical problem of additional thermal mismatch in the current simulation structure

Method used

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  • Stress simulation experiment structure of infrared detector focal plane component
  • Stress simulation experiment structure of infrared detector focal plane component
  • Stress simulation experiment structure of infrared detector focal plane component

Examples

Experimental program
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Embodiment Construction

[0010] The specific embodiment of the present invention is described in detail below (using chrome-gold column array simulation epitaxial wafer and circuit interface coupling as example):

[0011] 1. Fabrication of column array on one side of the circuit:

[0012] a) Circuit cleaning: use conventional semiconductor process methods to clean silicon circuits;

[0013] b) Photoetching chrome-gold holes: use the prepared photolithography plate to photoetch chrome-gold holes with semiconductor conventional photolithography technology, so that the area to be grown chrome-gold is exposed, and the rest is protected with photoresist;

[0014] c) Chromium-gold array growth: place the photoetched sample in ion sputtering coating equipment, and sputter and grow chrome-gold in turn, and its thickness is about half of the thickness of the photoresist;

[0015] d) Chromium-gold array forming: after the sputtering coating is completed, the photoresist and the chrome-gold on the photoresist a...

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Abstract

The invention discloses a stress simulation test structure for an infrared focal plane detector component. The stress simulation test structure adopts a felting column array and well simulates the displacement coupling of an interface between layers, thereby solving the technical problem of extra heat mismatching in the prior simulation structure, and greatly enhancing the accuracy of the test result.

Description

technical field [0001] The patent of the present invention relates to infrared focal plane detector technology, and specifically refers to an infrared detector focal plane component stress simulation experiment structure, which is suitable for structural stress simulation of infrared focal plane detector components. Background technique [0002] Infrared detector focal plane components are generally composed of many layers, including substrate, epitaxial film, underfill, silicon circuit, gemstone, Kovar, etc. The temperature of each layer is above room temperature and different. Even the difference is relatively large, but the working temperature of the components is near the boiling point of liquid nitrogen. Such a huge temperature difference acts on the materials of each layer whose thermal expansion coefficient is discrete on nearly two orders of magnitude, which inevitably introduces huge thermal stress into the structure. . Thermal stress often degrades the optoelectro...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01L1/00
Inventor 张海燕李言谨龚海梅丁瑞军
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI