Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Semiconductor device

A semiconductor and device technology, applied in the field of semiconductor devices with power circuits, to achieve the effect of improving voltage conversion efficiency and reducing parasitic wiring inductance

Inactive Publication Date: 2009-02-25
RENESAS TECH CORP
View PDF3 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Also, for example, the technique disclosed in Japanese Unexamined Patent Publication No. 2001-25239 employs resistors and capacitors in order to reduce noise when the DC-DC converter is manufactured as a single chip including a control circuit, a drive circuit, and a power MOSFET , noise becomes a problem for DC-DC converters

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device
  • Semiconductor device
  • Semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0050] The semiconductor device according to the first embodiment of the present invention is a non-isolated DC-DC converter for a power supply circuit used in, for example, a desktop personal computer, a notebook personal computer, a server, or a game machine. figure 1 It is a circuit diagram showing an example of the non-isolated DC-DC converter 1. The non-isolated DC-DC converter 1 includes: a control circuit 2, driver circuits 3a, 3b, a power MOSFET Q1 (first field effect transistor), a power MOSFET Q2 (second field effect transistor), a coil L1 and a capacitor C1. These elements are mounted on a wiring substrate and electrically interconnected by wiring on the wiring substrate. figure 1 Reference numeral 4 in indicates a CPU (Central Processing Unit), DSP (Digital Signal Processor) or other load circuit used in the above-mentioned desktop personal computer, notebook personal computer, server, game machine, etc. Reference marks ET1 and ET2 indicate terminals.

[0051] The con...

no. 2 example

[0086] Now, a second embodiment of the non-isolated DC-DC converter 1 according to the present invention will be described. Figure 20 It is a plan view illustrating a typical structure of the package 6a, which includes a part of the circuit for the non-isolated DC-DC converter 1. Figure 21 show Figure 20 The Y1-Y1 section. In order to improve the visibility of the drawings, Figure 20 Part of the shell 8 is excluded. In addition, the die pads 7a1 and 7a2 and the lead 7b are shaded.

[0087] In the second embodiment, the wiring for connecting the pad BP and each part is partially changed from the wire WR to the metal plate wire 30. More specifically, the pad BP1 for the drain of the power MOSFET Q1 in the semiconductor chip 5a is electrically connected to the lead 7b1 via a metal plate wire 30. The pad BP2 used for the source of the power MOSFET Q1 in the semiconductor chip 5a is electrically connected to the die pad 7a2 via the metal plate wire 30. The pad BP6 for the source of...

no. 3 example

[0090] Now, a third embodiment of the non-isolated DC-DC converter 1 according to the present invention will be described. Figure 22 It is a plan view illustrating a typical structure of the package 6a, which includes a part of the circuit for the non-isolated DC-DC converter 1. Figure 23 show Figure 22 The Y1-Y1 section. In order to improve the visibility of the drawings, Figure 22 Part of the shell 8 is excluded. In addition, the die pads 7a1 and 7a2 and the lead 7b are shaded.

[0091] In the third embodiment, the wiring for connecting the pad BP and each part is partially changed from the above-mentioned wire WR to the ribbon wire 33. The connection of the ribbon wire 33 is not described here because they are the same as the connection of the metal plate wire 30 used in the second embodiment. For example, the ribbon wire 33 is formed of copper (Cu), aluminum (Al), or other similar metals that are the same as in the case of the metal plate wire 30 described above. However, ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention enhances voltage conversion efficiency of a semiconductor device. In a non-isolated DC-DC converter that includes a high-side switch power MOSFET and a low-side switch power MOSFET, which are series-connected, the high-side switch power MOSFET and driver circuits for driving the high-side and low-side switch power MOSFETs are formed within one semiconductor chip, whereas the low-side switch power MOSFET is formed in another semiconductor chip. The two semiconductor chips are sealed in a single package.

Description

[0001] This application is a divisional application of the invention patent application with the filing date of January 14, 2005, the application number being 200510001718.3, and the invention title of "semiconductor device". [0002] Cross-references to related applications [0003] This application claims priority from Japanese Patent Application No. 2004-008779 filed on January 16, 2004, the entire content of which is incorporated into this application by reference. Technical field [0004] The present invention relates to a semiconductor device technology, and more particularly to a technology applied to a semiconductor device having a power supply circuit. Background technique [0005] A DC-DC converter widely used as a power supply circuit is formed by connecting a high-side switching power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) to a low-side switching power MOSFET in series. The high-end switching power MOSFET has a switching function controlled by a D...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L25/16H01L23/488H01L23/31H02M3/155H01L27/04G06F1/26H01L21/822H01L25/07H01L25/18H01L29/76H01L29/78H02M3/158H03K17/687
CPCH01L2924/13091Y02B70/1466H01L2924/01019H01L25/165H03K17/6871H01L2924/19041H01L2224/48472H01L2924/01079H01L2924/30107H02M3/1588H01L2924/12032H01L2224/0603H01L2924/181H01L2224/40245H01L24/40H01L2224/4103H01L24/41H01L2224/48091H01L2224/49111H01L2224/49431H01L2224/49433H01L2924/14H01L2224/73221H01L2224/371H01L2224/84801H01L2224/37124H01L2224/37147H01L2224/8485H01L24/37H01L2224/37599H01L2224/45014H01L2224/45124H01L2224/45147Y02B70/10H01L2224/48137H01L24/84H01L25/072H02M3/003H01L29/7813H01L29/7816H01L27/0922H01L23/49575H01L23/49562H01L23/49524H01L23/49551H01L23/36H01L23/4334H01L23/4952H02M1/08H02M3/155H01L2924/00H01L2924/00012H01L2924/00014
Inventor 宇野友彰白石正树松浦伸悌佐藤幸弘
Owner RENESAS TECH CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com