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Manufacturing method for low voltage diode with large capacitance variant ratio

A diode and varactor technology, used in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of many process steps, large series resistance, slow PN junction, etc., to achieve fewer process steps, large capacitance change ratio, The effect of improving the variable capacity ratio

Inactive Publication Date: 2009-03-11
NO 24 RES INST OF CETC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Its disadvantages are: the formed PN junction is slow, the variable capacity ratio is small, and the series resistance is large, which cannot meet the requirements of portable low-voltage power receiving devices such as MP3 and MP4.
However, the preparation of this varactor diode requires the use of LPCVD and polysilicon deposition processes, with many process steps

Method used

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  • Manufacturing method for low voltage diode with large capacitance variant ratio
  • Manufacturing method for low voltage diode with large capacitance variant ratio
  • Manufacturing method for low voltage diode with large capacitance variant ratio

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Embodiment Construction

[0023] The present invention will be described in further detail below in conjunction with specific examples and accompanying drawings.

[0024] (1) At a resistivity of 0.001Ω·cm, N heavily doped with arsenic ++ On the silicon substrate 1, an N-type epitaxial layer 2 is grown by a conventional method, the thickness of the epitaxial layer is 2.5 μm, the resistivity is 2.5Ω·cm, and the doped impurity is phosphorus to form the low-voltage large variable capacitance ratio diode. N ++ / N - 1 area, such as figure 1 shown.

[0025] (2) Perform conventional oxidation on the silicon wafer 1 on which the epitaxial layer has been grown, grow an oxide layer 3 with a thickness of 1.2 μm, perform conventional photolithography, and etch an active region window with an area of ​​220 μm×220 μm, such as figure 2 shown.

[0026] (3) Perform conventional oxidation on the silicon wafer 1 on which the window of the active region has been etched, grow a thin oxide layer A with a thickness of...

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Abstract

The invention relates to a method for preparing a low-voltage large capacitance ratio diode, which adopts a double-ion injection technology to form a PN junction diode, a precipitous PN junction is formed by regulating the injection dose and the anneal time of a P type region and an N type region of the PN junction, the capacitance ratio of the diode can be ensured under low reverse voltage, and the diode can satisfy the application requirement of a low-voltage portable receiving device. The corresponding capacitance ratio of the low-voltage large capacitance ratio diode can reach 3.0 under the conditions of low reverse voltage and smaller voltage variation range, and can be used for the low-voltage portable receiving device.

Description

technical field [0001] The invention relates to a method for manufacturing a varactor diode, in particular to a method for manufacturing a diode with a low voltage and a large variable capacitance ratio. The field where the diode manufactured by the invention can be applied is a low-voltage portable receiving device. Background technique [0002] In the field where tuning and frequency modulation functions are required in electronic circuits, varactor diodes are generally used. With the rapid development of television, radio and communications, the manufacture of varactor diodes has also gradually developed, and has now become an important branch of the diode family. At present, with the emergence of a large number of portable communication devices, higher requirements are put forward for the capacitance change ratio of the varactor diode, that is, the capacitance ratio, that is, it is required to have a larger capacitance under a smaller operating voltage and voltage varia...

Claims

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Application Information

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IPC IPC(8): H01L21/329
Inventor 胡明雨欧红旗税国华
Owner NO 24 RES INST OF CETC