Method for measuring mercury cadmium telluride material pn junction depth

A mercury cadmium telluride, pn junction technology, applied in the direction of measuring electricity, measuring devices, measuring electrical variables, etc., can solve the problems of long test process, complicated operation, difficult to achieve accurate test results, etc., to achieve simple test methods, test The results are accurate

Inactive Publication Date: 2009-03-11
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
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Problems solved by technology

Since this method requires repeated electrodes, the operation is complicated, the test process is very long, and the corrosion depth is estimated by the corrosion rate, the test results are difficult to be accurate

Method used

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  • Method for measuring mercury cadmium telluride material pn junction depth
  • Method for measuring mercury cadmium telluride material pn junction depth
  • Method for measuring mercury cadmium telluride material pn junction depth

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Embodiment Construction

[0017] A specific implementation of the present invention will be described in detail below:

[0018] 1. Production of ohmic electrode: LBIC measurement requires a good ohmic contact electrode. The production of ohmic electrode can use the general ohmic contact production method of mercury cadmium telluride semiconductor material, as follows:

[0019] a) Sample cleaning: first clean with trichloroethylene at 65°C for 20 minutes, then with ether at 65°C for 20 minutes, and then soak in acetone and ethanol at 65°C for 15 minutes. The above reagents are all analytically pure, and the cleaned sample surface is bright and clean.

[0020] b) Lithography pattern: the areas where the metal film needs to be deposited and the areas that do not need to be deposited are formed by a conventional lithography process

[0021] c) Metal film deposition: Place the photo-etched sample in an ion beam coating machine, and perform ion beam sputtering tin-gold film plating as an ohmic contact electrode....

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Abstract

The invention discloses a method for measuring the pn junction depth of a mercury cadmium telluride material. The invention adopts a laser beam inducing current method to measure the pn junction depth of the mercury cadmium telluride material. When a laser beam irradiates a measured pn junction area, LBIC current has to be generated; when the mercury cadmium telluride material is eroded layer by layer, a built-in electric field gradually weakens until disappears, and the eroding depth of the mercury cadmium telluride material is the pn junction depth at the moment. The measuring method of the invention has no need to prepare electrodes for a plurality of times, the measuring method is simple, and the measuring result is accurate.

Description

Technical field [0001] The invention relates to a method for measuring semiconductor materials, in particular to a method for measuring the junction depth of a mercury cadmium telluride material pn junction, which is suitable for measuring the junction depth of the plane junction and mesa junction of the mercury cadmium telluride material of an infrared detector. Background technique [0002] The junction depth of the pn junction is a key parameter for the preparation of semiconductor devices. There are many methods for measuring the junction depth, such as the extended resistance method, the corner grinding method, the roll groove method and the anodic oxidation method. However, these methods are not suitable for measuring the pn junction depth of mercury cadmium telluride materials. The reason is that mercury cadmium telluride materials are very fragile, especially p-type materials. Any mechanical processing will make them inverted. Therefore, people usually use stripping. Laye...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/66G01R31/00G01B21/18
Inventor 张海燕胡晓宁李言谨陆华杰
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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