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Etching composite

A composition and etching technology, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as difficult taper angles, and achieve the effect of reducing process steps

Inactive Publication Date: 2009-03-25
NAGASE CHEMTEX CORPORATION +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] In this way, the etching composition of a Cu single film and the etching composition of a two-layer laminated film of Cu (Cu alloy) and Mo have been studied, but it is difficult to obtain a satisfactory taper angle without undercutting.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] The etching composition was prepared with 2.5% by weight of triammonium phosphate trihydrate, 1.5% by weight of acetic acid monoethanolamine salt, 1.5% by weight of hydrogen peroxide, and the balance of water. The prepared etching composition (pH 9.05) was used. 3-layer laminated metal layer patterned by photoresist (Cu: 2000 , Each Mo alloy: 500 , A total of 3000 ) Substrate, the three-layer laminated metal layer is made of Cu and Mo alloy (I) (with 5 wt% Nb added Mo) or Cu and Mo alloy (II) (with 10 wt% Nb added Mo) The formed Mo alloy / Cu / Mo alloy laminated metal layer. The etching treatment is performed at a treatment temperature of 23°C, and the treatment time is the time until the metal layer is dissolved (Just. Etch. Time.). Through the etching process under the above conditions, the scanning electron micrographs of the tapered cross-section of the wiring obtained are as follows: figure 1 A(Mo5Nb / Cu / Mo5Nb) (using Mo alloy (I)), figure 1 B(Mo10Nb / Cu / Mo10Nb) (using...

Embodiment 2

[0043] The etching composition was prepared with 2.5% by weight of ammonium phosphate trihydrate, 3.75% by weight of acetic acid monoethanolamine salt, 1.5% by weight of hydrogen peroxide and the balance of water, and the prepared etching composition (pH 8.95) was used. Photoresist patterned three-layer laminated metal layer of Mo alloy / Cu / Mo alloy formed of Cu and Mo alloy (Mo with 10% by weight of Nb added) (Cu: Each Mo alloy: total ) Of the substrate. The etching treatment was performed at a treatment temperature of 23°C, and the treatment time was the time until the metal layer was dissolved (Just. Etch. Time.). Through the etching process under the above conditions, the obtained scanning electron micrograph of the tapered cross-section of the wiring is as follows: figure 1 C (Mo10Nb / Cu / Mo10Nb) shown.

[0044] by figure 1 It can be seen from C that the three-layer laminated metal layer of Cu and Mo alloy can be etched at the same time, and there is no side etching, and a ...

Embodiment 3

[0047] The etching composition was prepared with 2.5% by weight of triammonium phosphate trihydrate, 1.0% by weight of acetic acid monoethanolamine salt, 0.75% by weight of hydrogen peroxide, and the balance of water. The prepared etching composition (pH 9.07) was used. A two-layer laminated metal layer of Mo / Cu composed of Cu and Mo patterned with a photoresist (Cu: Mo: total ) Of the substrate. The etching treatment is performed at a treatment temperature of 25°C, and the treatment time is the time until the metal layer is dissolved (Just. Etch. Time.). Through the etching treatment under the above-mentioned conditions, the scanning electron micrograph of the tapered cross-section of the wiring obtained is shown figure 2 .

[0048] by figure 2 It can be seen that the two-layer laminated metal layer of Cu and Mo can be etched at the same time, and there is no side etching, and a good cross-sectional taper is obtained.

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Abstract

The invention provides an etching composition. Satisfactory conical etching section shape which is difficult to realize in prior art is obtained without generation of lateral erosion when a stacked metal layer containing Cu or Cu alloy and Mo or Mo alloy is etched by the etching composition. At least one salt selected form group comprising phosphate whose aqueous solution is basic and carboxylate whose aqueous solutuin is basic, hydrogen peroxide and water are essential components of the inventive composition. The etching composition is used to etch Cu or Cu alloy and Mo or Mo alloy of stacked metal layer with more that two layers at the same time, the stacked metal layer with more than two layers is formed by one layer or more than two layers of Cu or Cu alloy and one layer or more than two layers of Mo or Mo alloy.

Description

Technical field [0001] The present invention relates to an etching composition used to form copper wiring that constitutes an array substrate for electronic devices, particularly an array substrate for TFT-LCD (Thin Film Transistor Liquid Crystal Display). Background technique [0002] Array substrates for electronic devices such as TFT-LCD array substrates have electrodes and wirings such as gate, gate wiring, source, source wiring, drain, and drain wiring. These electrodes and wiring are responsible for The role of signal transmission to the component. At present, the above-mentioned wiring materials mainly use Al or Al alloy. The wiring of Al or Al alloy does not use a single film of Al or Al alloy because of the formation of an oxide film, electromigration and diffusion into Si. In other words, in order to prevent the above-mentioned problems, it is necessary to build up a two-layer metal layer or three-layer metal layer by depositing a metal or providing a lower layer to use...

Claims

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Application Information

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IPC IPC(8): C23F1/34
CPCC23F1/34C23F1/38H01L21/30604
Inventor 西嶋佳孝安江秀国山边崇史向喜广村田英夫
Owner NAGASE CHEMTEX CORPORATION
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