Unlock instant, AI-driven research and patent intelligence for your innovation.

Mask and method for manufacturing same

A mask and pattern technology, applied in the field of mask and mask manufacturing, can solve the problems of reduced light intensity and lithography pattern resolution, shortened line distance in shading area, and increased mask pattern complexity, etc. Achieve the effect of increasing light intensity and contrast between light and dark, reducing diffuse reflection, and increasing light intensity

Inactive Publication Date: 2009-03-25
SEMICON MFG INT (SHANGHAI) CORP
View PDF1 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] As the complexity of semiconductor devices continues to increase, the design rules of integrated circuits (design rules) gradually become smaller, which increases the complexity of mask patterns accordingly, and shortens the distance between lines in light-shielding areas, resulting in numerical aperture (Numerical Aperture) )reduce
When the numerical aperture is reduced and light passes through the mask pattern, light diffraction and interference phenomena will occur, reducing the light intensity and the resolution of the photolithography pattern

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Mask and method for manufacturing same
  • Mask and method for manufacturing same
  • Mask and method for manufacturing same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0038] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0039] In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. However, the present invention can be implemented in many ways other than those described here, and those skilled in the art can make similar extensions without departing from the connotation of the present invention. Accordingly, the invention is not limited to the specific implementations disclosed below.

[0040] Figure 1 to Figure 3 A schematic diagram illustrating the exposure process of the photolithography process. Such as figure 1 As shown, the mask 10 includes a quartz substrate 11 and a light-shielding pattern 12 made of a chrome layer. When exposing, the light-shielding patt...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a mask plate, which comprises a transparent substrate and shading graphics. The shading graphics consists of a plurality of shading lines. The shading lines are provided with top surfaces and bottom surfaces, the bottom surfaces are contact surfaces of the shading lines and the transparent substrate. The width of the top surfaces of the cross section of the shading lines is larger than that of the bottom surfaces. The mask plate and the method for manufacturing the same can further improve the definition and the resolution of images formed on the surface of a wafer through the mask plate.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a mask and a method for manufacturing the mask. Background technique [0002] In the semiconductor manufacturing industry, the formation of photoresist patterns is to use photolithographic exposure equipment such as steppers or scanning exposure machines to expose on photosensitive materials, and to form required patterns through developing and fixing processes. The tools required for exposing the photoresist on the wafer surface, in addition to the exposure equipment, also need a mask (mask) for providing circuit patterns for pattern transfer. The specific steps are to first coat a layer of photoresist on the semiconductor substrate, then use the exposure equipment to project the pattern on the mask onto the photoresist layer, and use a developer to develop the exposed part of the photoresist layer. The photoresist layer reveals the pattern on the mask. The...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G03F1/14G03F1/08G03F1/00G03F1/30
Inventor 吴汉明张海洋
Owner SEMICON MFG INT (SHANGHAI) CORP