Double data rate interface
An electronic circuit, data rate technology, applied in the field of double data rate synchronous dynamic random access memory
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[0042] overall and refer to Figure 5 , the DDR-SRAM timing interface 50 according to an embodiment of the present invention utilizes a delay line 51, wherein the delay time introduced by the delay line 51 is equal to the total setup time including the bus rise time for the input DQ signal. This is achieved by using a delay locked loop 52 controlled by the clock signal CLK within the processor (not shown), such that the time resolution is equal to the total settling time. Slave delay lines 54, 56 may be used to create delays in the DQS signal.
[0043] Any suitable components may be utilized, eg inverter stages. Typically, a variable delay element or delay-locked loop or ring oscillator is implemented as limiting the current supply to a series of CMOS inverters, where the current is limited to each individual delay line element 64, or jointly to all components. Alternatively, the supply voltage to each delay line element 64 can also be reduced to achieve the same purpose. ...
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