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Double data rate interface

An electronic circuit, data rate technology, applied in the field of double data rate synchronous dynamic random access memory

Inactive Publication Date: 2012-08-29
NXP BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0015]The timing delay issues discussed above are common to high speed DDR interfaces and can come from various sources such as memory chips not meeting JEDEC specifications, or by The timing delay introduced by the printed circuit board of the memory chip
Also, it should be realized that the problem of timing delay will grow with the increase of clock frequency

Method used

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Embodiment Construction

[0042] overall and refer to Figure 5 , the DDR-SRAM timing interface 50 according to an embodiment of the present invention utilizes a delay line 51, wherein the delay time introduced by the delay line 51 is equal to the total setup time including the bus rise time for the input DQ signal. This is achieved by using a delay locked loop 52 controlled by the clock signal CLK within the processor (not shown), such that the time resolution is equal to the total settling time. Slave delay lines 54, 56 may be used to create delays in the DQS signal.

[0043] Any suitable components may be utilized, eg inverter stages. Typically, a variable delay element or delay-locked loop or ring oscillator is implemented as limiting the current supply to a series of CMOS inverters, where the current is limited to each individual delay line element 64, or jointly to all components. Alternatively, the supply voltage to each delay line element 64 can also be reduced to achieve the same purpose. ...

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Abstract

The present invention relates to a double data rate interface and method for use between a processor and random access memory, comprising a delay line including means for creating a delay in a data strobe signal from the random access memory, the delay line being arranged such that the delay in the data strobe signal is equal to the sum of set-up time and data bus rise time. The interface of includes the delay line comprising the delay locked loop which in turn comprises a ring oscillator. The ring oscillator includes a buffer and a Vernier delay.

Description

technical field [0001] The present invention relates to double data rate (DDR) synchronous dynamic random access memory (SDRAM), and in particular to interface timing systems, and delay locked loops for use therein. Background technique [0002] As we all know, SDRAM uses a square wave clock signal to transfer data. Like most synchronous circuits, traditional SDRAM architectures perform data transfers on clock low-to-high transitions and ignore the opposite high-to-low transition. DDR-SDRAM, on the other hand, operates on both low-to-high and high-to-low transitions, thereby doubling the transfer rate for a particular clock rate, or on the other hand, converting the The clock rate is halved. [0003] Figure 1a shows the main elements of the interface employed in DDR transmission, while Figure 1b shows a typical timing diagram for such a transmission. The clock signal CLK is sent from the processor to the DDR memory. DDR memory uses this signal to generate "read" cycle c...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C7/10
CPCG11C7/1066G11C7/106G11C7/222G11C7/1093G11C7/22G11C7/1087G11C7/1078G11C7/1051G11C11/4076G11C2207/2254
Inventor 威廉姆·瑞德曼-怀特
Owner NXP BV