Electronic component comprising a p-doped organic semiconductor

Abstract

The invention relates to an electronic component comprising a layer of an organic semiconductor material in which a dopant is dispersed, the energetic difference between the output energy of the dopant and the HOMO level of the organic semiconductor material being lower than 0.5eV. The dopant is an atomic element having an evaporation temperature lower than 13000C, at a pressure of 10<-8> Torr. The invention eliminates any toxicity problems related to usual organic acceptor dopants, and especially applies to organic electroluminescent diodes.

Description

technical field [0001] The present invention relates to p-doped organic semiconducting materials having a base formed especially by small molecules (as opposed to polymers), and the applications of these doped semiconductors, in particular light-emitting diodes, organic transistors or any other electronic element. A p-dopant is an electron acceptor dopant; thus it is generally oxidizing to the material it is doped with. Background technique [0002] The fabrication of transistors or diodes from organic semiconductors with a matrix formed of small molecules usually requires a vacuum deposition step on a substrate, which is usually previously provided with one or more electrodes called bottom electrodes; In , semiconductor molecules are evaporated in a vacuum chamber so that they recondense on the substrate to form a deposited layer; one or more electrodes, called top electrodes, are usually subsequently deposited on the organic layer. [0003] Document US6525465 relates to ...

AI Technical Summary

Problems solved by technology

Suitable p-dopants are usually organic dopants such as F4-TCNQ; these organic p-dopants are usually toxic

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