Stibium bismuth phase-change alloy mask read-only ultra-resolution CD-disc

A technology for masking read-only and phase-change alloys, which is applied in the field of optical storage of information technology, can solve the problems of the quality and life of read-only super-resolution optical discs, and achieves the effects of simple structure, high sensitivity and good readout cycle.

Inactive Publication Date: 2009-04-15
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
View PDF0 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The problem to be solved by the present invention is to overcome the above-mentioned technical defects of the read-only super-resolution optical disc caused by the excessively high readout power, a

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Stibium bismuth phase-change alloy mask read-only ultra-resolution CD-disc
  • Stibium bismuth phase-change alloy mask read-only ultra-resolution CD-disc
  • Stibium bismuth phase-change alloy mask read-only ultra-resolution CD-disc

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0016] The present invention will be further described below in conjunction with the embodiments and accompanying drawings, but the protection scope of the present invention should not be limited thereby.

[0017] see first figure 1 , figure 1 It is the structural diagram of the antimony-bismuth phase-change alloy mask read-only super-resolution disc of the present invention. It can be seen from the figure that the antimony-bismuth phase-change alloy mask read-only super-resolution optical disc of the present invention has a structure comprising a dielectric layer 01, a mask layer 02 and a disc base 03, and the dielectric layer 01 is made of silicon nitride; The mask layer 02 is made of antimony-bismuth alloy, that is, SbxBi(1-x) film, where the value of x varies from 0.7 to 0.9.

[0018] The thickness of the mask layer 02 is 30-90 nm. This mask layer 02 is used for the super-resolved readout of spots smaller than the diffraction limit.

[0019] The thickness of the dielec...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

A antimony and bismuth intersection alloy mask read-only super-resolution CD structurally comprises a dielectric layer, a mask layer and a disk base and is characterized in that the dielectric layer consists of silicon nitride; the mask layer consists of antimony and bismuth alloy, that is, SbxBi(1-x) film, wherein, the variation range of x is from 0.7-0.9. The super-resolution CD is characterized by simple structure, low read-out power, high sensibility, good read-out cyclicity, etc.

Description

technical field [0001] The invention belongs to the field of optical storage of information technology, and is a read-only super-resolution optical disc of an antimony-bismuth phase-change alloy mask. Compared with the currently used mask materials, the antimony-bismuth phase-change alloy mask read-only super-resolution optical disk of the present invention has the characteristics of simple structure, low readout power, high sensitivity, good readout cyclicity, etc., and has important Application prospect. Background technique [0002] With the development of high-density optical storage technology, the information recording point is getting smaller and smaller, which is much smaller than the diffraction limit of the optical head. In the field of optical storage, the improvement of storage density largely depends on the readout technology of information. When the recorded information points are very small, and a readout laser spot contains two or more recording points, the...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G11B7/24G11B7/241G11B7/2433
Inventor 姜来新吴谊群王阳魏劲松
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap