Production method of nano size air groove
A technology of nanometer size and manufacturing method, which is applied in the direction of nanostructure manufacturing, nanotechnology, nanotechnology, etc., can solve the problems of waveguide sidewall roughness and difficulty in making triangles, etc., and achieve the effect of solving the problem of sidewall roughness
Inactive Publication Date: 2009-05-06
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology
This method can make nanometer-sized triangular air slots, and use air as the middle low-refractive index material of the slot waveguide, which solves the problem that the cross-section of the low-refractive index material in the middle of the slot waveguide is difficult to make into a triangle and the sidewall of the waveguide is rough. question
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[0032] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.
[0033] Fig. 3 is a schematic diagram of the steps of making an air groove by the method proposed by the present invention.
[0034] For the sake of clarity, in the description of this embodiment, the substrate material is silicon on insulator (SOI) as an example.
[0035] First, silicon-on-insulator (SOI) wafers are cleaned;
[0036] Next, as shown in FIG. 3a, a layer of electron beam photoresist 302 is coated on the cleaned silicon-on-insulator (SOI) sheet 301;
[0037] Then, as shown in Figure 3b, on the surface of the silicon-on-insulator (SOI) sheet, the exposure pattern is transferred to the electron beam photoresist by electron beam lithography technology. The shape of the exposure pattern is a rectangle, and the l...
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Abstract
The invention provides a preparation method used for a nanometer air channel, comprising the steps as follows: a photolithography step: the top layer is provided with silicon material and the bottom layer is a substrate surface made of any materials; the exposed patterns are transferred onto a photoresist by a photoetching technique; the minimum line dimension of the pattern is controlled within the nanometer magnitude; an etching step: the photoresist is used as a mask; the silicon material on the top layer is etched by a dry etching technique, thus forming a longitudinal etching channel; an oxidation step: a layer of thin oxidation layer is formed on the surface of the silicon material on the top layer by a thermal oxidation technique; and a deposition step: a chemical vapor deposition technique is utilized and deposition raw material is adopted to fill the silicon oxide into the etching channel, thus finally forming the nanometer air channel. The method overcomes the technical difficulties that the traditional method is difficult to prepare the submicron air channel with triangle section, the waveguide side wall is coarse, and the like, and can prepare the nanometer air channel by a standard micro-electronic process.
Description
technical field [0001] The invention relates to a method for manufacturing an air groove, in particular to a method for manufacturing a nanometer-sized air groove on a substrate whose top layer is made of silicon material and whose bottom layer is made of any material. This method can use standard microelectronic technology to produce air slots or three-dimensional air cones with isosceles triangles or isosceles trapezoids in cross section, and can realize the production of micro masks by controlling the filling conditions, thereby forming a New method of making nanowires. Background technique [0002] Microelectronics technology continues to develop in the direction of miniaturization and multi-functional integration, and various advanced micro-processing technologies continue to emerge. Among them, the development level of nanoscale exposure technology and etching technology plays a decisive role in the improvement of device performance. Silicon material is a widely rese...
Claims
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Inventor 屠晓光陈少武
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI