Method for purifying and ingot casting multi-temperature zones silicon material and apparatus thereof

A silicon material, multi-temperature zone technology, applied in the direction of polycrystalline material growth, post-processing devices, chemical instruments and methods, etc., can solve problems such as power consumption, avoid cooling and reheating, good directional solidification effect, high energy The effect of efficiency

Inactive Publication Date: 2009-05-06
PROPOWER RENEWABLE ENERGY SHANGHAI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But in this way, the silicon liquid needs to be heated twice and cooled twice, which consumes electric energy needlessly.

Method used

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  • Method for purifying and ingot casting multi-temperature zones silicon material and apparatus thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Firstly, the material is loaded, using a quartz crucible 1 of 720mm x 720mm x 420mm, and loading 270 kg of silicon material and about 3 kg of slagging agent composed of CaO, MgO, SiO2, FeO, Na2O, BaO, and CaF2. After the sheath 5 of the crucible 1 is installed, the crucible 1 is moved up to the induction heating area through the lifting device 10, and then the power supply of the induction heater 2 is energized to heat the crucible 1 after vacuuming.

[0025] At 300 degrees, keep warm for half an hour, then rise to 900 degrees, and keep warm for another half an hour.

[0026] Then heat up to 1390 degrees and keep warm for half an hour.

[0027] Then start to heat up to heat up and melt the silicon material in the crucible 1 . After melting, continue to heat up to 1650 degrees and keep the temperature for 2 hours. At this time, impurities with high saturated vapor pressure in the silicon material are volatilized. At the end of the heat preservation, the reaction gas i...

Embodiment 2

[0033] Carry out feeding first, adopt the quartz crucible 1 of 720mm x 720mm x 420mm, put into 160 kilograms of silicon materials and about 2 kilograms of the slagging agent that is composed of CaO, MgO, SiO2 and FeO. After the sheath 5 of the crucible 1 is installed, the crucible 1 is moved up to the induction heating area through the lifting device 10, and then the power supply of the induction heater 2 is energized to heat the crucible 1 after vacuuming.

[0034] At 200 degrees, keep warm for 0.5 hours, then rise to 800 degrees, and keep warm for 0.3 hours.

[0035] Then heat up to 1350 degrees, and keep warm for 0.5 hours.

[0036] Then start to heat up to heat up and melt the silicon material in the crucible 1 . After melting, continue to heat up to 1600 degrees, and keep it warm for 1 hour. At this time, impurities with high saturated vapor pressure in the silicon material are volatilized. At the end of the heat preservation, the reaction gas introduction pipe 11 is l...

Embodiment 3

[0042] Carry out feeding first, adopt the quartz crucible 1 of 720mm x 720mm x 420mm, load 400 kilograms of silicon material and about 4 kilograms of slagging agent composed of CaO, Na2O, BaO and CaF2. After the sheath 5 of the crucible 1 is installed, the crucible 1 is moved up to the induction heating area through the lifting device 10, and then the power supply of the induction heater 2 is energized to heat the crucible 1 after vacuuming.

[0043] At 400 degrees, keep warm for 1 hour, then rise to 1000 degrees, and keep warm for 0.7 hours.

[0044] Then heat up to 1430 degrees, and keep warm for 2 hours.

[0045] Then start to heat up to heat up and melt the silicon material in the crucible 1 . After melting, continue to heat up to 1700 degrees and keep the temperature for 3 hours. At this time, impurities with high saturated vapor pressure in the silicon material are volatilized. When the heat preservation is finished, the reaction gas introduction pipe 11 is lowered, a...

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Abstract

The invention provides a method and a device used for purifying and ingot-casting of multi-temperature area silicon material; the silicon material is added into a crucible after a fluxing medium is added; the silicon material is inductively heated, fused and vacuum-smelted; furthermore, oxidative gas is added to carry out the reaction; subsequently, temperature reducing and directional solidification are carried out to the silicon material to form silicon ingots by crystallization. The device comprises a crucible system, a lifting device, an induction heater and a resistance heater; the induction heater is arranged on the upper surface of the resistance heater so as to respectively form an induction heating area and a resistance heating area; the lifting device is arranged on the lower surface of the resistance heating area and can move up and down in the induction heating area and the resistance heating area; and the crucible system is arranged on the lifting device. The method and the device can be used for purifying and ingot-casting the silicon ingot with high purity and high purification efficiency, can complete the whole process in one furnace body and can save the time and energy resource.

Description

technical field [0001] The invention belongs to the technical field of polysilicon production, and relates to a method and device for purifying silicon material in multiple temperature zones and casting ingots. Background technique [0002] Although the time of high-temperature melting and vacuum melting of metals has been very long, the time of vacuum melting of silicon is very short. Demand for solar-grade silicon has risen dramatically since the solar cell market began to grow rapidly. Since the purity requirement of solar-grade silicon is lower than that of semiconductors, as long as it can reach 6N (99.9999%), it is enough. Therefore, the technology of purifying silicon by metallurgical methods has attracted people's attention. At present, the smelting of silicon reported in the world mainly uses the introduction of H2, water vapor, argon, and the use of ion beams, electron beams, etc. to remove impurities such as boron and phosphorus; and then uses the segregation ef...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/037C30B29/06C30B28/00C30B35/00F27B17/00
Inventor 史珺水川佟晨宗卫峰
Owner PROPOWER RENEWABLE ENERGY SHANGHAI
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