NOT gate logic circuit and its forming method

Abstract

The invention relates to a 'NOT' logic circuit and a fabricating method thereof. The 'NOT' logic circuit comprises an input terminal, an enhancement type back-gate ZnO nanowire field effect transistor, and a depletion mode back-gate ZnO nanowire field effect transistor. The input terminal is used for receiving an input voltage signal; the gate electrode of the enhancement type back-gate ZnO nanowire field effect transistor is connected to the input terminal, and the source electrode thereof is coupled to an earth point; the drain electrode of the depletion mode back-gate ZnO nanowire field effect transistor is coupled to a voltage source, and the gate electrode and the source electrode of the depletion mode back-gate ZnO nanowire field effect transistor, and the drain electrode of the enhancement type back-gate ZnO nanowire field effect transistor are coupled at a point; and the point serves as an output terminal used for outputting the voltage signal. The invention utilizes the manufacturing technology and the interconnection technology of ZnO nanowire materials and ZnO nanowire field effect transistors, and fabricates the 'NOT' logic circuit based on the direct coupling field effect logic of the ZnO nanowire field effect transistor.

Description

Technical field [0001] The present invention relates to the field of compound semiconductor materials and devices, in particular to a direct-coupled FET Logic (DCFL) NOT logic circuit based on a back-gate zinc oxide nanowire field effect transistor and a method for forming the same. Background technique [0002] ZnO is a new type of multifunctional compound semiconductor material with direct band gap of II-VI group, which is called the third-generation wide-gap semiconductor material. The ZnO crystal has a wurtzite structure, the forbidden band width is about 3.37 eV, and the exciton binding energy is about 60 meV. ZnO has the characteristics of semiconductor, photoelectric, piezoelectric, pyroelectric, gas sensitivity and transparent conductivity, and has broad potential application value in many fields such as sensing, sound, light, and electricity. [0003] In recent years, research on ZnO materials and devices has received extensive attention. The research scope covers the gr...

AI Technical Summary

Problems solved by technology

However, since intrinsic ZnO is an N-type semiconductor, and most of the fabricated ZnO NW FETs are depletion-type devices, the application of ZnO nanowire materials to realize logic circuits based on enhancement / depletion-type FETs is restricted.

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