Data storage method of flash memory medium

Abstract

The invention provides a method for storing data for a flash memory medium. The flash memory medium comprises a plurality of memory blocks and a space block pool formed by part of the memory blocks, wherein the plurality of the memory blocks are divided into two or more sub-areas. In the process of data storage, the flash memory medium comprises a step of recycling invalid blocks; a step of acquiring space blocks with less erasing times from the space block pool; a step of judging whether the acquired space blocks with less erasing times are aged blocks; and a step of performing static replacement on the aged blocks. With the method for storing data for the flash memory medium, each physical block in the flash memory medium can be used in a comparatively average mode, so that the use times of all the physical blocks in the flash memory medium are kept synchronized and uniformized to prevent certain physical blocks from earlier ageing due to frequent use so as to prolong the service life of the whole flash memory medium.

Description

technical field [0001] The invention relates to the field of semiconductor data storage, in particular to a data storage method in a flash memory medium. Background technique [0002] Existing flash memory devices have long been known to people, and people's requirements for cost performance are constantly improving. However, in order to reduce costs, manufacturers of flash memory chips make the lifespan of flash memory chips shorter and shorter. Typically, the erasable times of each physical block (ie Block) of the current Nand flash memory is 10,000 times, or even less than 5,000 times. On the other hand, due to the randomness of the write operation to the flash memory device, some physical blocks of the flash memory chip have more operations, while some physical blocks have fewer operations, and the erase and write between blocks in the same flash memory medium The difference in number of times is very large, which accelerates the aging of the flash memory chip in advan...

AI Technical Summary

Problems solved by technology

However, with the continuous improvement of the capacity of flash memory chips, the number of blocks in a single flash memory chip is also increasing, which increases the difficulty of the original wear leveling algorithm, and it is difficult to achieve a true balance in the entire flash memory chip

[0003] Most of the existing wear leveling algorithms are based on the entire flash memory chip. When there are many blocks in the flash memory chip, such as 8192 blocks in the flash memory chip, if you find one that can be moved from the front to the back (the life span is less than the upper limit of the average life span) Logic blocks may be found in the front part of the flash memory chip, but the latter blocks may not be found at all; if you want to find the youngest block, and compare the life of each block in the flash memory chip, not only is the efficiency very low , and it is not convenient to record the life table of the entire flash memory chip

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