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Method for manufacturing single-chip-integrated GaAs base PHEMT and PIN diode

A PIN diode, monolithic integration technology, applied in the field of compound semiconductor materials and devices, can solve the problems of unfavorable PHEMT circuit potential conversion, large conduction resistance, etc.

Active Publication Date: 2009-06-03
SOI MICRO CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, if a Schottky barrier diode is used to realize the potential conversion of the PHEMT circuit, under high current density, the Schottky barrier diode will produce a large on-resistance, which is not conducive to the realization of the potential conversion of the PHEMT circuit.

Method used

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  • Method for manufacturing single-chip-integrated GaAs base PHEMT and PIN diode
  • Method for manufacturing single-chip-integrated GaAs base PHEMT and PIN diode
  • Method for manufacturing single-chip-integrated GaAs base PHEMT and PIN diode

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Embodiment Construction

[0034] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0035] Such as figure 1 as shown, figure 1 It is a flow chart of a method for manufacturing a monolithic GaAs-based PHEMT and a PIN diode provided by the present invention. The method includes the following process steps in sequence: photoetching the PIN upper electrode, evaporating the upper electrode metal, stripping the upper electrode metal, corrosion and isolation of the PIN mesa, and simultaneously Photolithography of PIN bottom electrode and PHEMT source and drain, evaporation of PIN bottom electrode and PHEMT source and drain metal, stripping of PIN bottom electrode and PHEMT source and drain metal, ohmic contact alloy, PHEMT mesa corrosion isolation, PHEMT gate photolithography, gate groove corrosion, evaporation...

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Abstract

The invention discloses a method which is used for manufacturing a single-chip-integrated GaAs base PHEMT and a PIN diode. In sequence, the method comprises the steps as follows: a PIN upper electrode is photo-etched, upper electrode metal is vaporized, the upper electrode metal is peeled, a PIN table top is corroded and isolated and a PIN lower electrode and a PHEMT source drain are photo-etched at the same time. The PIN lower electrode and PHEMT source drain metal are vaporized; the PIN lower electrode and PHEMT source drain are peeled; ohmic contact is carried out on alloy; the PHEMT table top is corroded and isolated; the PHEMT grid is photo-etched; the grid groove is corroded; the grid metal is vaporized; the grid metal is peeled; a passivating medium is grown; a hole is etched; one-time wiring photo-etching is carried out; wiring metal is vaporized; and the wiring metal is peeled. The invention integrates the GaAs base PHEMT and PIN diode on the same substrate, so as to realize single-chip-integration of the GaAs base PHEMT and PIN diode.

Description

technical field [0001] The invention relates to the technical field of compound semiconductor materials and devices, in particular to a method for manufacturing a monolithically integrated gallium arsenide (GaAs)-based pseudomorphic high electron mobility transistor (PHEMT) and a PIN diode. Background technique [0002] The pseudo high electron mobility transistor (PHEMT) has the characteristics of high frequency, high speed, high power gain and low noise figure, so it has a wide range of applications in the millimeter wave frequency band, and is widely used in military, space and civil communication fields, such as millimeter wave Radar, electronic warfare, smart equipment, satellite communications and radiation astronomy, etc. [0003] A PIN diode is a special kind of charge storage diode. Under the forward bias voltage, the on-resistance is very small, similar to a short circuit; under the reverse bias voltage, the impedance is very high, similar to an open circuit, and ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/82H01L21/822
Inventor 徐静波张海英叶甜春
Owner SOI MICRO CO LTD
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