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Photosensor and display device

A light sensor and display device technology, applied in radiation control devices, instruments, optics, etc., can solve the problem of difficulty in obtaining a large number of light signals, and achieve the effect of increasing sensitivity

Inactive Publication Date: 2009-06-03
JAPAN DISPLAY INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, it is difficult for a photosensor including such a polysilicon film to obtain a large-scale optical signal

Method used

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  • Photosensor and display device

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0031] Figure 1A is a schematic sectional view of a substantial part of the photosensor S1 which is a feature of the display device according to the first embodiment of the present invention. Figure 1B is the plan view of light sensor S1. Figure 1B The cross-section taken along line IA-IA corresponds to Figure 1A shown.

[0032] The photosensor S1 is a photosensor S having a so-called PIN thin film diode structure. The photosensor S1 has the following structure.

[0033] A substrate 1 made of a transparent material has a groove 1a on one surface. The groove 1 a has a forward tapered sloped side wall A whose groove width gradually increases toward the opening end of the groove.

[0034] A reflective material layer 3 made of light reflective material is patterned on the substrate 1 to cover the inner walls, including the bottom and inclined side walls A and the periphery of the groove 1a. It is important that the reflective material layer 3 has a thickness not filling ...

no. 2 example

[0063] image 3 is a plan view of a photosensor S2 which is a feature of a display device according to a second embodiment of the present invention. along image 3 The section intercepted by the IA-IA line is the same as the Figure 1A same as shown in .

[0064] The photosensor S2 differs from the photosensor S1 according to the first embodiment in that the photosensor S2 has a plurality of grooves 1 a in the substrate 1 . Other structures of the optical sensor S2 are the same as those of the optical sensor S1.

[0065] In this case, all the grooves 1 a are arranged below the portion of the light receiving portion (i region) 7 i provided with the semiconductor thin film 7 . The shape of each groove 1a is the same as that in the first embodiment. In other words, each groove 1a has a forward tapered inclined side wall A, wherein the width of the groove gradually increases toward the opening end of the groove. The reflective material layer 3 is configured to completely cov...

no. 3 example

[0070] Figure 4A is a schematic cross-sectional view of a photosensor S3, which is a feature of a display device, according to a third embodiment of the present invention. Figure 4B is a plan view of light sensor S3. along Figure 4B The section taken by the IVA-IVA line corresponds to Figure 4A shown.

[0071] Figure 4A and Figure 4BThe photosensor S3 shown differs from the photosensor S1 according to the first embodiment in that the reflective material layer 3 is connected to the p region 7p of the semiconductor thin film 7 . Other structures of the optical sensor S3 are the same as those of the optical sensor S1, including the lamination relationship between the groove 1a, the reflective material layer 3 and the semiconductor thin film 7.

[0072] In the photosensor S3 having the above-mentioned structure, the reflective material layer 3 is arranged on the bottom and the inclined side wall A of the groove 1a of the substrate 1, so that the orientation of the disp...

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Abstract

The invention discloses a photosensor and display device. The photosensor including a semiconductor thin film having a light receiving portion includes the following elements. A substrate has a recess with an inclined side wall having a forward tapered shape. A reflective material layer is disposed along the recess of the substrate. An insulating layer covers the substrate having thereon the reflective material layer. The semiconductor thin film is disposed on the insulating layer so as to cross the recess. The light receiving portion of the semiconductor thin film is disposed above the recess. Consequently, the sensitivity to light coming from above the substrate can be increased. In addition, the sensitivity to long-wavelength light can also be increased.

Description

[0001] Cross References to Related Applications [0002] The present invention contains subject matter related to Japanese Patent Application JP 2007-308596 filed in the Japan Patent Office on Nov. 29, 2007, the entire content of which is hereby incorporated by reference. technical field [0003] The present invention relates to a photosensor and a display device, and in particular, to a photosensor including a semiconductor thin film (for example, a PIN diode) and a display device including the photosensor. Background technique [0004] Some liquid crystal display devices used as display units of mobile phones and personal digital assistants (PDAs) each include a photo sensor as a position information input unit. [0005] Figure 14 The structure of a PIN diode configured as a photosensor in such a display device is shown. refer to Figure 14 The PIN diode includes a substrate 201 , an insulating layer 202 covering the substrate 201 , and a semiconductor thin film 203 incl...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/105H01L27/144G02F1/133G02F1/1362
CPCG06F3/0412H01L31/0232H01L27/1214G02F2201/58H01L31/105G02F1/13318G06F3/042H01L31/0216H01L27/14H01L29/84H01L29/868
Inventor 伊藤良一山中刚
Owner JAPAN DISPLAY INC
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