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Programmable non-volatile memory chip unit

A memory unit, non-volatile technology, applied in the field of one-time programmable volatile memory, can solve the problem of large area occupied by polysilicon fuses, and achieve the effect of reducing the occupied area

Active Publication Date: 2010-11-03
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the large area occupied by polysilicon fuses, generally about 25 square microns, they are gradually eliminated.

Method used

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Experimental program
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Embodiment Construction

[0013] The one-time programmable non-volatile memory unit of the present invention includes a MOS transistor, a PN junction and a CMOS inverter, wherein the PN junction is reversely connected to the MOS transistor. The MOS transistor may be a PMOS transistor or an NMOS transistor. The doping dose of the P region and N region in the PN junction is preferably greater than 10 15 atoms / cubic centimeter, such as a Zener diode. The larger the doping dose, the lower the memory programming voltage. When the above-mentioned PMOS transistor, NMOS transistor, and MOS transistor in the CMOS inverter use an enhancement MOS transistor, the performance of the memory is better.

[0014] image 3 As an embodiment of the present invention, the memory cell includes a PMOS transistor, a PN junction and a CMOS inverter. The drain of the PMOS transistor is connected to the drain of the PMOS transistor in the CMOS inverter to receive the power supply voltage Vdd; the gate of the PMOS transistor ...

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Abstract

The invention discloses a one-time programmable non-volatile memory unit, which comprises a PN knot, an MOS transistor and a CMOS inverter, wherein the PN knot is in inverse connection with the MOS transistor. In the memory unit, the PN knot with inverse connection replaces a polysilicon fuse of the prior memory unit, thereby effectively reducing the areas of a memory chip, meeting the needs for reduction of the small areas of the chip and being applied to the preparation of the one-time non-volatile memory chip.

Description

technical field [0001] The invention relates to a one-time programmable non-volatile memory unit. It particularly relates to a one-time programmable volatile memory with a PN junction structure. Background technique [0002] A one-time programmable memory device (OTP) is a non-volatile memory element that retains information even when power is removed. One-time programmable memory (OTP) can provide flexible and low-cost solutions for circuit applications, so it is widely used in various circuits. The OTP of the polysilicon fuse structure was the first to be applied. The schematic diagram of the OTP unit circuit of the traditional fuse structure is shown in figure 1 with figure 2 shown. Before programming, the output level of the cell is fixed to "0" or "1" according to the difference of the cell structure. When programming, a high-intensity current is passed through the fuse to fuse the polysilicon to form a high resistance, so that the output level becomes "1" and "0...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/115H01L23/522G11C17/08H10B69/00
Inventor 陈华伦陈瑜熊涛陈雄斌罗啸
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP