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Semiconductor device and manufacturing method thereof

A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., and can solve device performance problems and other issues

Inactive Publication Date: 2009-07-01
DONGBU HITEK CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] Therefore, the oxide layer will be over-etched or under-etched, causing problems in device performance

Method used

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  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof

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Experimental program
Comparison scheme
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Embodiment Construction

[0012] Hereinafter, a semiconductor device and a method of manufacturing the same according to an embodiment of the present invention will be described with reference to the accompanying drawings.

[0013] Figure 18 is a cross-sectional view showing a semiconductor device according to the present invention.

[0014] refer to Figure 18 , forming the first conductivity type buried layer 9 and the first conductivity type drift region 10 in the semiconductor substrate, and forming the second conductivity type well 16 in the first conductivity type drift region 10 .

[0015] Next, a gate insulating layer 13 and at least one gate electrode 14 are formed in the region (for example, the first trench in the substrate) where the drift region 10 of the first conductivity type and the well 16 of the second conductivity type are selectively removed, And a first conductivity type source region 18 is formed on opposite sides of each gate electrode 14 . In some embodiments, the gate elec...

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Abstract

A method of manufacturing a semiconductor device including forming a first conductive-type buried layer in a substrate; forming a first conductive-type drift area on the first conductive-type buried layer; forming a gate insulating layer and gate electrodes by selectively removing the first conductive-type drift area; forming a first oxide layer on the substrate and gate electrodes; implanting second conductive-type impurity ions into the substrate; forming a nitride layer on the first oxide layer; forming a second conductive-type well by diffusing the second conductive-type impurity ions while forming a second oxide layer; removing the nitride layer, the second oxide layer, and portions of the first oxide layer; forming first conductive-type source areas at sides of the gate electrode(s); forming a dielectric layer on the oxide layer; forming a trench in the dielectric layer and the oxide layer; forming a source contact in the trench; and forming a drain.

Description

technical field [0001] Embodiments of the present invention relate to a semiconductor device and a method of manufacturing the same. Background technique [0002] A semiconductor device, such as a power transistor, generally has a source region formed on a semiconductor substrate and a drain region formed below the source region to form a channel in a vertical direction. A device (eg, a power transistor) has a structure including a gate electrode filled in a trench formed in a semiconductor substrate. [0003] Generally, if the thickness of the oxide layer formed on the gate electrode is too large, the thick oxide layer can negatively affect the performance of a semiconductor device (eg, a power transistor). The oxide layer grows during the heat treatment process and dopant diffusion process for ESD (electrostatic discharge) protection circuits, so that the thickness of the oxide layer is about 580±40 . [0004] However, in general, the oxide layer formed on the gate ele...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L21/28H01L29/78H01L29/41H01L29/417H01L29/423H01L29/43H01L29/06
CPCH01L29/66734H01L29/456H01L29/66727H01L29/7813H01L29/41766
Inventor 李相燮
Owner DONGBU HITEK CO LTD