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Etching method for carbon containing layer

A carbon layer and etching gas technology, applied in the field of carbon-containing layer etching, can solve the problems of high proportion and reduce the quality of semiconductor devices, and achieve the effect of improving quality and yield rate

Inactive Publication Date: 2009-07-15
ADVANCED MICRO FAB EQUIP INC CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In the prior art, when the carbon-containing layer is etched by the plasma etching method to form a pattern of the carbon-containing layer, the chemical etching is isotropic due to the occurrence of oxygen-containing gas such as oxygen and carbon, although the plasma etching has anisotropy , the etching direction can be controlled by voltage, but the reaction between oxygen-containing gas and carbon accounts for a higher proportion of the total etching, so it will still be on the sidewall of the etching barrier layer when forming the carbon-containing layer pattern. Erosion causes an undercut on the side wall, so that the subsequent use of the barrier layer as a mask to etch the interlayer insulating layer to form a through hole will change the critical dimension of the through hole, reducing the quality of semiconductor devices

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  • Etching method for carbon containing layer
  • Etching method for carbon containing layer
  • Etching method for carbon containing layer

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Embodiment 1

[0031] Figure 6 to Figure 9 It is a schematic diagram of the first embodiment of etching a carbon-containing layer in the process of forming a through hole in the present invention. Such as Figure 6 As shown, an interlayer insulating layer 102 with a thickness of 5000 angstroms to 15000 angstroms is formed on a semiconductor substrate 100 by chemical vapor deposition, wherein the material of the interlayer insulating layer 102 can be silicon dioxide, silicon nitride or silicon oxynitride etc.; transistors and metal wiring layers are formed between the semiconductor substrate 100 and the interlayer insulating layer 102 . A carbon-containing layer 104 is formed on the interlayer insulating layer 102, the material of the carbon-containing layer 104 is amorphous carbon, and the thickness is 1000 angstroms to 2000 angstroms; the method of forming the carbon-containing layer 104 using amorphous carbon as a material is chemical Vapor deposition or plasma enhanced chemical vapor d...

Embodiment 2

[0046] Figure 10 to Figure 14 It is a schematic diagram of the second embodiment of etching a carbon-containing layer in the process of forming a through hole in the present invention. Such as Figure 10 As shown, an interlayer insulating layer 202 with a thickness of 5000 angstroms to 15000 angstroms is formed on a semiconductor substrate 200 by chemical vapor deposition, wherein the material of the interlayer insulating layer 202 can be silicon dioxide, silicon nitride or silicon oxynitride etc.; transistors and metal wiring layers are formed between the semiconductor substrate 200 and the interlayer insulating layer 202 . A carbon-containing layer 204 is formed on the interlayer insulating layer 202, the material of the carbon-containing layer 204 is amorphous carbon, and the thickness is 1000 angstroms to 2000 angstroms; the method of forming the carbon-containing layer 204 using amorphous carbon as a material is chemical Vapor deposition or plasma enhanced chemical vap...

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Abstract

A carbonaceous layer etching method includes: providing a semi-conductor substrate with the carbonaceous layer on it; using an oxygen-containing gas and a silicon-containing gas as a mixed etching gas, etching the carbonaceous layer by plasma to form a carbonaceous layer graph, forming a protection layer on the lateral wall of the carbonaceous layer using silicon dioxide generated by the etching gas. The invention guarantees that the follow semiconductor device size is satisfactory and improves the semiconductor device quality and good product rate.

Description

technical field [0001] The invention relates to the field of manufacturing semiconductor devices, in particular to an etching method for a carbon-containing layer. Background technique [0002] As the integration level of semiconductor devices becomes higher and higher, the critical dimensions of semiconductor devices are also continuously reduced, and in the process of forming metal interconnection structures, the aspect ratio of through holes is also continuously increased. In the process of etching to form a through hole, in order to completely etch the etched film layer and form a through hole through the film layer, and avoid the phenomenon of etching residue, it is necessary to define the pattern of the through hole. The thickness of the adhesive layer is reduced; however, if the thickness of the photoresist layer is too thin, many problems will arise. In order to solve these problems, prior to forming a photoresist layer, an amorphous carbon layer is formed as an etc...

Claims

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Application Information

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IPC IPC(8): H01L21/02H01L21/311H01L21/768
Inventor 埃文·皮尔斯
Owner ADVANCED MICRO FAB EQUIP INC CHINA