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CoCrPt-based sputtering target and method for production thereof

A manufacturing method and technology of sputtering target, which are applied in the directions of sputtering coating, sputtering coating, record carrier manufacturing, etc., can solve the problem of not being able to fully improve the yield of platinum, and can suppress nodules and arc discharges. generation, excellent uniformity, and the effect of suppressing changes in the composition ratio of chromium

Inactive Publication Date: 2009-07-29
MITSUI MINING & SMELTING CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] However, the production method of Patent Document 1 cannot sufficiently improve the yield of platinum

Method used

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  • CoCrPt-based sputtering target and method for production thereof
  • CoCrPt-based sputtering target and method for production thereof
  • CoCrPt-based sputtering target and method for production thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0080] [Example 1]: Manufacture of CoCrPt-based sputtering target by the first method

Using an ultra-small gas atomization device (manufactured by Nisshin Technological Research Institute), under the condition that the outlet water temperature is 1650°C (measured with a radiation thermometer), 1.5kg of Co 60 Cr 40 alloy by spraying 50kg / cm 2 Ar gas was used for gas atomization to obtain powder. The obtained powder is a spherical powder with an average particle diameter of 150 μm or less.

[0081] Then, in an air environment, using a zirconia ball mill, the weight ratio of the ball to the powder is set to 20:1, the rotation speed is set to 50rpm, and the rotation time is set to 6 hours. Pulverized, powder (1) was obtained.

[0082] For Co powder (manufactured by Soekawa Rika Co., Ltd.: the average particle size is about 2 μm, D 90 6.71, D 50 is 4.29) and SiO 2 Powder (manufactured by Admatech: average particle size is about 2 μm, D 90 2.87, D 50 1.52) was mechanically...

Embodiment 2～4

Embodiment 5

[0088] [Example 5]: Manufacture of CoCrPt-based sputtering target by second method

Using an ultra-small gas atomization device (manufactured by Nisshin Technology Research Institute), under the condition that the outlet water temperature is 1650°C (measured with a radiation thermometer), 2kg of Co 60 Cr 40 alloy by spraying 50kg / cm 2 Ar gas was used for gas atomization to obtain powder. The obtained powder is a spherical powder with an average particle diameter of 150 μm or less.

[0089] Then, using the obtained powder and the SiO used in Example 1 2 The powder with the same powder, in the air environment, using a zirconia ball mill, set the weight ratio of the ball to the powder as 20:1, the rotation speed as 50rpm, and the rotation time as 192 hours. Mechanical alloying gave powder (4).

[0090] In the obtained powder (4), put the Pt powder used in Example 1 and the same powder as the Co powder, and use Co 64 Cr 10 Pt 16 (SiO 2 ) 10 The composition ratio was mixe...

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Abstract

Disclosed is a CoCrPt-based sputtering target which is reduced in the size and the quantity of a high-chromium particle having a high chromium atom content unevenly distributed in the sputtering target and therefore has increased target homogeneity, which is reduced in the formation of nodule or arcing, and which has a desired chemical composition. The CoCrPt-based sputtering target comprises cobalt, chromium, a ceramic material and platinum, wherein a high-chromium particle which has a high chromium atom content and is unevenly distributed in the sputtering target has a longest diameter of 40 [mu]m or less.

Description

technical field [0001] The invention relates to a CoCrPt-based sputtering target containing cobalt, chromium, ceramics and platinum and a manufacturing method thereof. Background technique [0002] Conventionally, perpendicular magnetic recording media generally use a magnetic recording film capable of imparting high coercive force and low noise to the medium, and the magnetic recording film is obtained by dispersing an oxide in an alloy composed of cobalt-chromium-platinum. The magnetic recording film is produced by sputtering an alloy composed of cobalt-chromium-platinum using a CoCrPt-based sputtering target containing an oxide. [0003] In recent years, there is a need for a magnetic recording film that further improves the coercive force and reduces media noise, so the crystal grains constituting the magnetic recording film are made finer and the non-magnetic phase such as oxide is dispersed. Research. [0004] Among them, Patent Document 1 discloses a method for manu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C22C19/00G11B5/851
CPCG11B5/851C23C14/06B22F2998/10H01J37/3429C22C1/0433C22C1/1084C22C19/07H01J37/34C23C14/3414B22F9/08B22F9/04B22F3/15
Inventor 加藤和照林信和
Owner MITSUI MINING & SMELTING CO LTD
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