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Semiconductor laser

A technology of semiconductors and lasers, applied in the field of enhanced grating external cavity semiconductor lasers, which can solve the problems of poor stability of discrete components, laser spectrum line width, and excessive volume, and achieve easy tuning and control, small volume, and frequency selection. enhanced effect

Inactive Publication Date: 2009-08-12
NAT INST OF METROLOGY CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0009] In view of this, the present invention proposes a semiconductor laser, which solves the problems of wide spectral lines of conventional grating external cavity semiconductor lasers, poor stability of discrete components, excessive volume and complex systems, etc.

Method used

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  • Semiconductor laser
  • Semiconductor laser
  • Semiconductor laser

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Embodiment Construction

[0050] The present invention will be described more fully hereinafter with reference to the accompanying drawings, in which exemplary embodiments of the invention are illustrated.

[0051] Image 6 It is a schematic diagram of a single-block folded F-P cavity enhanced grazing diffraction structure external cavity semiconductor laser according to an embodiment of the present invention. The divergent light beam emitted by the semiconductor laser tube 1 is converged into a parallel light beam by the aspheric collimator lens 3, and enters the grating 12 at an incident angle θi. The diffraction angle of the first-order diffracted light on the grating 12 is θd. F-P cavity 5, after multiple reflections inside the single folded F-P cavity 5, the reverse incident reflected light of the cavity 5 is returned to the semiconductor laser tube 1 as feedback light along the collinear and reverse path with the original incident beam, and the grating 12 direct mirror reflected light as the out...

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Abstract

The invention discloses a semiconductor laser, which comprises a semiconductor laser tube, (1), an alignment lens (3), a grating (12) and an F - P cavity, wherein the F - P cavity is a single block folding F - P cavity (5). The semiconductor laser with a grating external cavity can make the spectrum line breadth of the output laser less than 100 kHz without using a feedback locking electronic system, and solve the problems that the spectrum line of the semiconductor laser with the prior grating external cavity is broad, the stability of a discrete element is poor, the volume is overlarge, the system is complicated and the like.

Description

technical field [0001] The invention relates to semiconductor laser technology, in particular to an enhanced grating external-cavity semiconductor laser using a single-block folded F-P cavity. Background technique [0002] Semiconductor lasers, including distributed feedback (DFB) and external cavity semiconductor lasers, are important laser light sources in scientific research and industry. However, usually the spectral lines output by semiconductor lasers are relatively wide, and the output spectral lines of external cavity semiconductor lasers generally reach hundreds of kilohertz or even several megahertz. DFB semiconductor lasers often have wider linewidths. This kind of wide linewidth exists with In many cases the application requirements are far apart. [0003] Commonly used external cavity semiconductor lasers can be divided into Littrow structure and Littman structure, respectively see figure 1 with 2 shown. figure 1 It is a schematic diagram of the structure of...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/06H01S5/14
Inventor 臧二军曹建平李烨方占军
Owner NAT INST OF METROLOGY CHINA