Apparatus and method for manufacturing carbon structure
A technology for manufacturing devices and manufacturing methods, which is applied in the field of manufacturing devices for carbon structures, can solve problems such as the inability to maintain vacuum state device operation, and achieve the effect of suppressing pollution and foreign matter
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no. 1 approach
[0040] A first embodiment of the present invention will be described. figure 1 It is a schematic configuration diagram showing the carbon structure manufacturing apparatus FA according to the first embodiment. Carbon structures include so-called carbon nanostructures. Carbon nanostructures include, for example, carbon nanowalls, carbon nanotubes, carbon nanofibers, carbon nanosheets (flakes), and carbon nanosheets.
[0041] In this embodiment, the case where the manufacturing apparatus FA manufactures the carbon nanostructure by forming the carbon nanostructure on the substrate W is described as an example, but the present invention is not limited thereto. If it is a carbon-containing structure, the structure can be produced by the production apparatus FA. That is, the carbon structure (carbon nanostructure) that can be formed by the production apparatus FA is not limited to the above, and any carbon structure (carbon nanostructure) can be produced.
[0042] exist figure 1 A...
no. 2 approach
[0075] Next, a second embodiment of the present invention will be described. The characteristic part of the second embodiment is that the manufacturing apparatus FA includes a sputtering device 11 having a holding member 12 for holding the target material T so as to be arranged in the first space 1A, and sputtering the target material T based on the plasma introduced into the first space 1A. The target material T is irradiated with ion particles generated by the inert gas, and sputtered particles for forming a metal film and / or catalyst fine particles on the substrate W are released from the target material T. That is, in the above-mentioned first embodiment, the carbon structure is formed based on the so-called plasma CVD method, but in the second embodiment, in addition to the operation of forming the carbon structure by the plasma CVD method, an operation based on The so-called sputtering method is an operation to form a metal film and / or catalyst fine particles. In the fo...
no. 3 approach
[0091] Next, a third embodiment of the present invention will be described. In the above-mentioned second embodiment, electric power is applied to the electrode 12A holding the target material T to form the plasma generation region PU' in the first space 1A, and a metal film is formed, but it may also be Figure 5A As shown, the plasma generated by the plasma generating device 4 is introduced into the first space 1A in which the target material T is arranged, and the target material T is sputtered by the introduced plasma (sheet plasma 10 ). In this way, a metal film can also be formed on the substrate W. FIG.
[0092] In addition, in this embodiment, the second discharge gas supply device 14 may be omitted. In addition, when the gas supply amount from the first discharge gas supply device 4G is used to obtain the pressure required to generate plasma in the second space 2A, the pressure in the first space 1A cannot satisfy the predetermined pressure required for sputtering. ...
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