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Method for preparing LED chip substrate structure

A technology of light-emitting diode and substrate structure, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., to achieve the effects of improving luminous efficiency, reducing interface reflection, and reducing pollution

Active Publication Date: 2011-09-14
EPILIGHT TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The technical problem to be solved by the present invention is to provide a method for preparing a substrate structure of a light-emitting diode chip. Since the photoresist is irradiated with deep ultraviolet rays, the properties of the photoresist are changed, and the photoresist's resistance to ICP (Inductively Coupled Plasma) is improved. Body) etching ability, can directly use photoresist as a mask to manufacture excellent microstructure patterns, and can effectively reduce the contamination of the substrate after etching, thereby helping to reduce the internal absorption of the light-emitting diode chip and improve the chip's luminescence efficiency

Method used

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  • Method for preparing LED chip substrate structure
  • Method for preparing LED chip substrate structure
  • Method for preparing LED chip substrate structure

Examples

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Embodiment 1

[0026] First refer to Figure 1a As shown, a photoresist is coated on the sapphire substrate 10 to form a photoresist film layer 20, and the thickness of the photoresist film layer 20 is 0.5 μm. Then, the photoresist is patterned on the substrate by a photolithography process to form a desired pattern such as Figure 1b As shown, the pattern is a periodic regular arrangement of cones. Then utilize deep ultraviolet (DUV) 30 to irradiate patterned photoresist film layer 21 as Figure 1c As shown, the irradiation conditions are as follows: deep ultraviolet light with a wavelength of 300nm is selected, the irradiation angle is 90°, and the irradiation time is 60 minutes. The irradiation angle refers to the included angle between the deep ultraviolet (DUV) 30 and the plane where the patterned photoresist film layer 21 is located. After the patterned photoresist film layer 21 is irradiated by deep ultraviolet (DUV) 30, its properties have changed, and the ability of the patterned...

Embodiment 2

[0029] First refer to Figure 1a As shown, a photoresist is coated on the sapphire substrate 10 to form a photoresist film layer 20, and the thickness of the photoresist film layer 20 is 2 μm. Then, the photoresist is patterned on the substrate by a photolithography process to form a desired pattern such as Figure 1b As shown, the pattern is a non-periodic regular arrangement of quadrangular prisms. Then utilize deep ultraviolet (DUV) 30 to irradiate patterned photoresist film layer 21 as Figure 1c As shown, the irradiation conditions are as follows: select deep ultraviolet rays with a wavelength of 200nm, an irradiation angle of 60°, and an irradiation time of 30 minutes. The irradiation angle refers to the included angle between the deep ultraviolet (DUV) 30 and the plane where the patterned photoresist film layer 21 is located. After the patterned photoresist film layer 21 is irradiated by deep ultraviolet (DUV) 30, its properties have changed, and the ability of the p...

Embodiment 3

[0032] First refer to Figure 1a As shown, a photoresist is coated on the sapphire substrate 10 to form a photoresist film layer 20, and the thickness of the photoresist film layer 20 is 4 μm. Then, the photoresist is patterned on the substrate by a photolithography process to form a desired pattern such as Figure 1b As shown, the pattern is a non-periodic regular arrangement of circular frustums. Then utilize deep ultraviolet (DUV) 30 to irradiate patterned photoresist film layer 21 as Figure 1c As shown, the irradiation conditions are as follows: select deep ultraviolet rays with a wavelength of 100 nm, an irradiation angle of 30°, and an irradiation time of 1 minute. The irradiation angle refers to the included angle between the deep ultraviolet (DUV) 30 and the plane where the patterned photoresist film layer 21 is located. After the patterned photoresist film layer 21 is irradiated by deep ultraviolet (DUV) 30, its properties have changed, and the ability of the patt...

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Abstract

The invention relates to a method for preparing an LED chip substrate structure, comprising the following steps: forming a layer of photoresist film layer on the surface of a sapphire substrate, patterning the photoresist film layer using the photoetching technology to form the desirable patterns, irradiating the photoresist layer using the dark ultraviolet, melting the photoresist film layer using the reflux technology to form a plurality of convex hulls; and transmiting the profiles of the convex hulls on the substrate using the inductively coupled plasma etching process to form convex-hull microstructures on the substrate. As the photoresist is irradiated by the dark ultraviolet, the property of the photoresist is changed, and the inductively coupled plasma (CP) etching capability of the photoresist is improved, therefore, the photoresist is capable of directly being used as mask for making good-quality microstructural patterns to effectively reduce the pollution of the substrate after the etching and reduce the internal absorption and boundary reflection of the LED chips and improve the luminous efficiency of the LED chips.

Description

technical field [0001] The invention relates to a method for preparing a light-emitting diode chip, in particular to a method for preparing a substrate structure for improving the luminous efficiency of the chip. Background technique [0002] Light-emitting diodes have the advantages of small size, high efficiency and long life, and are widely used in traffic indication, outdoor full-color display and other fields. In particular, the use of high-power light-emitting diodes may realize semiconductor solid-state lighting, causing a revolution in the history of human lighting, thus It has gradually become a research hotspot in the field of electronics. In order to obtain high-brightness LEDs, the key is to improve the internal quantum efficiency and external quantum efficiency of the device. At present, the light extraction efficiency of the chip is the main factor limiting the external quantum efficiency of the device. The main reason is The refractive index difference between...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00
Inventor 袁根如郝茂盛颜建锋李士涛陈诚董云飞
Owner EPILIGHT TECH