Light emitting diode chip structure manufacturing method
A technology of light-emitting diode and chip structure, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of increased controllability, limited brightness improvement, long corrosion time, etc., to improve quality and luminous efficiency, crystal defects Reduce, reduce the effect of internal absorption
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Embodiment 1
[0042] Step 1: Make a metal layer on the sapphire by using an electron beam evaporation machine or sputtering, and the metal material is one of titanium, nickel, aluminum, and chromium;
[0043] Step 2: Use photoresist to form a layer of photoresist film on the structure formed in step 1, the thickness of the film layer is 0.1-10um, and use photolithography technology to pattern the photoresist on the substrate to form the desired The pattern; such as cylinder, round platform, etc.
[0044] Step 3: Reflow the photoresist at low temperature with a rubber baking table, reflow the previous photoresist pattern into a convex hull or truncated cone structure, and reflow the incomplete peripheral graphics caused by the mask operation into a convex hull or truncated cone shape , to make up for the lack of consistency between the peripheral graphics and the central graphics after the mask, so that the graphics consistency on the entire substrate is greatly improved. Reflow conditions: ...
Embodiment 2
[0054] Step 1: Use photoresist to form a layer of photoresist film on the sapphire substrate, the thickness of the film layer is 0.1um~10um, use photolithography technology to pattern the photoresist on the substrate to form a periodic arrangement the pit;
[0055] Step 2: Evaporate a metal layer on the surface of the structure formed in step 1 by electron beam evaporation or sputtering, the metal is nickel or other metals, and the thickness is 0.1-10um;
[0056] Step 3: Clean the photoresist by wet cleaning or stripping;
[0057] Step 4: By using metal as a mask, the metal pattern is transferred to the substrate by dry etching.
[0058] Step 5: Clean the metal with wet cleaning, and the corrosion solution is sulfuric acid and nitric acid solution;
[0059] Step 6: Etching the substrate by a wet method, corroding the pattern after step 1) into a triangular pyramid shape, and the etching solution is a mixed solution of sulfuric acid, phosphoric acid, sulfuric acid and phospho...
Embodiment 3
[0064] A method for manufacturing a light emitting diode chip structure, characterized in that the method comprises the following steps:
[0065] 1) transfer the pattern to the sapphire substrate by using a dry etching process;
[0066] 2) The previous pattern is formed into a triangular pyramid by wet etching the sapphire substrate.
[0067] Described step 1) comprises the following steps:
[0068] Step i: Deposit a layer of SiO on the substrate surface 2 or Si 3 N 4 ;
[0069] Step ii: Use photoresist to form a layer of photoresist film on the structure formed in step 1, the thickness of the film layer is 0.1um~10um, use photolithography technology to pattern the photoresist on the substrate to form a cylinder shaped pattern;
[0070] Step iii: use wet etching or dry etching to expose the SiO 2 or Si 3 N 4 etch away;
[0071] Step iv: By using SiO 2 or Si 3 N 4 Film mask, transfer the pattern to the substrate by dry etching;
[0072] Step v: Wet etch the remain...
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