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LED chip and manufacturing method thereof

A technology of light-emitting diodes and manufacturing methods, applied to electrical components, circuits, semiconductor devices, etc., can solve problems such as ineffective heat dissipation, reduced life of light-emitting chips, and reduced luminous efficiency, so as to reduce crystal defects and reduce reflection and absorption , Reduce the effect of interface reflection

Inactive Publication Date: 2009-11-25
GUANGDONG TONGFANG ILLUMINATIONS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in conventional light-emitting diodes, the luminous efficiency is reduced due to interface refraction and internal absorption between the flat silicon wafer and the buffer layer
Moreover, the thermal conductivity of the substrate and buffer layer in traditional light-emitting diodes is low. For example, the thermal conductivity of gallium arsenide is 44-58W / mK, while the thermal conductivity of sapphire is 35-40W / mK
In this way, the heat generated during the working process of the light-emitting chip cannot be effectively dissipated to the outside, which reduces the life of the light-emitting chip
Due to the influence of the above factors, the luminous efficiency of the current traditional light-emitting diode chips can only be 40 to 50 lumens / watt, which cannot meet the lighting requirements, and its life is not stable.

Method used

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  • LED chip and manufacturing method thereof
  • LED chip and manufacturing method thereof
  • LED chip and manufacturing method thereof

Examples

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no. 1 example

[0024] first reference Figures 1A-1C A method of manufacturing a light emitting diode chip according to a first embodiment of the present invention is described. Such as Figure 1A As shown, a substrate 1 was prepared. The material of the substrate 1 can be selected from silicon, sapphire, silicon carbide or zinc oxide, for example. A plurality of bumps 2 are then formed on the upper surface of the substrate 1 . A plurality of protrusions 2 can be regularly arranged on the upper surface of the substrate 1, such as Figure 5 shown. The planar shape of this protrusion 2 can be, for example, a circle or a regular hexagon, such as Figure 6 shown. However, the present invention is not limited to the above-described embodiments. The protrusions 2 can also be in other shapes, or arranged irregularly on the upper surface of the substrate 1 . The range of the angle θ of the sidewall of the protrusion 2 relative to the normal to the plane of the substrate is greater than 0 degr...

no. 2 example

[0029] Figures 2A-2C It is a schematic cross-sectional structure diagram of a method for manufacturing a light-emitting diode chip according to a second embodiment of the present invention. The structure of the light emitting diode chip according to the second embodiment of the present invention and its manufacturing method are basically similar to the light emitting diode chip of the first embodiment, except that a plurality of recesses 2 are formed on the upper surface of the semiconductor substrate 1 ' to replace the plurality of protrusions 2 in the first embodiment. The shape, size and distribution of the depressions 2' are similar to the protrusions 2 in the first embodiment. That is to say, a plurality of depressions 2' can be regularly arranged on the upper surface of the substrate 1, such as Figure 5shown. The plane shape of the depression 2' can be, for example, a circle or a regular hexagon, such as Figure 6 shown. However, the present invention is not limit...

no. 3 example

[0031] Figures 3A-3C It is a schematic cross-sectional structure diagram of a method for manufacturing a light-emitting diode chip according to a third embodiment of the present invention. The structure of the light emitting diode chip according to the third embodiment of the present invention and its manufacturing method are basically similar to the light emitting diode chip of the first embodiment, except that a plurality of depressions 4 are formed on the upper surface of the buffer pattern layer 3 ' to replace the plurality of protrusions 4 in the first embodiment. The shape, size and distribution of the depressions 4' are similar to the protrusions 4 in the first embodiment. That is to say, a plurality of depressions 4' can be regularly arranged on the upper surface of the substrate 1, such as Figure 5 shown. The plane shape of the depression 4' can be, for example, a circle or a regular hexagon, such as Figure 6 shown. However, the present invention is not limite...

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Abstract

The invention discloses a light emitting diode chip and a manufacturing method thereof. The method comprises the steps of: preparing a substrate, and forming a plurality of concave-convex microstructures on the upper surface of the substrate; forming a buffering pattern layer on the upper surface of the substrate, wherein the buffering pattern layer has a plurality of concave-convex microstructures corresponding to the concave-convex microstructures on the substrate; forming a n-type semiconductor layer on the buffering pattern layer; forming a light-emitting layer on one part of the n-type semiconductor layer; forming a p-type semiconductor layer on the light-emitting layer; and respectively forming a n-electrode and a p-electrode on the other part of the n-type semiconductor layer and the p-type semiconductor layer. The inventive light emitting diode chip has improved light-emitting efficiency.

Description

technical field [0001] The invention relates to a light emitting diode (LED) chip and a manufacturing method thereof. Background technique [0002] With the continuous development of semiconductor chip (chip) technology, the traditional technology can no longer meet the increasing requirements on the luminous efficiency and brightness of light emitting diodes. For traditional light-emitting diodes, the light-emitting structure formed by epitaxial growth is usually formed on a flat substrate with a specific crystal orientation, such as a silicon wafer. A buffer layer is then formed at low temperature between the silicon wafer and the light-emitting structure. However, in conventional LEDs, the luminous efficiency is reduced due to interfacial refraction and internal absorption between the flat silicon wafer and the buffer layer. Moreover, the thermal conductivity of the substrate and buffer layer in conventional LEDs is low. For example, the thermal conductivity of gallium ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00
Inventor 樊邦扬翁新川叶国光
Owner GUANGDONG TONGFANG ILLUMINATIONS CO LTD