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Semiconductor ceramic composition and method for producing the same

A ceramic composition and semiconductor technology, which is applied in the direction of resistors with positive temperature coefficients, etc., can solve problems such as environmental pollution, and achieve the effects of reducing room temperature resistance, inhibiting the formation of different phases, and inhibiting composition changes.

Inactive Publication Date: 2009-09-09
HITACHI METALS LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the PbTiO 3 Contains elements that cause environmental pollution, so it is necessary not to use PbTiO in recent years 3 s material

Method used

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  • Semiconductor ceramic composition and method for producing the same
  • Semiconductor ceramic composition and method for producing the same
  • Semiconductor ceramic composition and method for producing the same

Examples

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preparation example Construction

[0053] In the step of preparing BNT calcined powder in the separate calcination method, Na 2 CO 3 、 Bi 2 o 3 and TiO 2 The raw material powders are mixed to prepare mixed raw material powders. In this step, after adding too much Bi 2 o 3 (for example, in an amount greater than 5 mol %), this is disadvantageous since different phases may form during calcination and the room temperature resistance may increase.

[0054] Then, the mixed raw material powder is calcined. The calcination temperature is preferably in the range of 700°C to 950°C. The calcination time is preferably 0.5 hours to 10 hours, more preferably 2 hours to 6 hours. When the calcination temperature is lower than 700°C or the calcination time is less than 0.5 hours, 2 CO 3 Or NaO generated by decomposition may react with water in the environment or a solvent in the case of wet mixing, thereby disadvantageously causing a change in composition or a change in characteristics. On the other hand, when the c...

Embodiment 1

[0068] Preparation of BaCO 3 、TiO 2 and La 2 o 3 The starting material powder and compounded as (Ba 0.994 La 0.006 )TiO 3 , followed by mixing in distilled water. The obtained mixed material powder was calcined in air at 500°C to 1300°C for 4 hours to obtain (BaLa)TiO 3 Calcined powder. figure 1 Represents (BaLa)TiO 3 X-ray diffraction patterns of calcined powders at various calcination temperatures ranging from 500 °C to 1200 °C. Although no temperature indication is given to the X-ray diffraction pattern of the lowermost figure, this pattern corresponds to the case where the temperature indication is 500°C.

[0069] Depend on figure 1 It is clearly visible that (BaLa)TiO calcined at 1000°C or higher 3 No residual BaCO in the powder 3 and TiO 2 , and a completely single-phase (BaLa)TiO is formed in 3 .

[0070] Preparation of Na 2 CO 3 、 Bi 2 o 3 and TiO 2 The starting material powder and compounded as (Bi 0.5 Na 0.5 )TiO 3, followed by mixing in ethano...

Embodiment 2

[0076] Preparation of BaCO 3 、TiO 2 and Nb 2 o 5 The starting material powder and compounded as Ba(Ti 0.998 Nb 0.002 )O 3 , followed by mixing in pure water. The obtained mixed material powders were calcined in air at 1000 °C for 4 hours to obtain Ba(TiNb)O 3 Calcined powder.

[0077] Preparation of Na 2 CO 3 、 Bi 2 o 3 and TiO 2 The starting material powder and compounded as (Bi 0.5 Na 0.5 )TiO 3 , followed by mixing in ethanol. The obtained mixed material powders were calcined in air at 800 °C for 2 hours to obtain (BiNa)TiO 3 Calcined powder.

[0078] Ba(TiNb)O prepared in this way 3 Calcined powder and (BiNa)TiO 3 The calcined powder was compounded at a molar ratio of 73 / 7, and then the amount of BaCO shown in Table 2 was added 3 Powder and TiO 2 powder. Using pure water as a medium, they were mixed and crushed in a ball mill to obtain a mixed calcined powder having an average particle size of 1.0 μm to 2.0 μm, followed by drying. The PVA was added t...

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Abstract

The invention discloses a semiconductor ceramic composition containing no Pb, wherein the Curie temperature is shifted to the positive direction and high jump characteristics are obtained while suppressing increase in room temperature resistivity to the minimum, specifically a semiconductor ceramic composition obtained by sintering a calcinated powder mixture of a BT calcinated powder composed ofa (BaR)TiO3 calcinated powder or a Ba(TiM)O3 calcinated powder (wherein R and M are semiconductorizing elements) and a BNT calcinated powder composed of (BiNa)TiO3 calcinated powder, wherein a part of Ba in BaTiO3 is substituted by Bi-Na. The semiconductor ceramic composition is obtained by adding BaCO3 and / or TiO2 into the BT calcinated powder, the BNT calcinated powder or a mixture of them.

Description

technical field [0001] The present invention relates to a semiconductive ceramic composition for use in PTC thermistors, PTC heaters, PTC switches, temperature detectors and the like and having a positive resistance temperature. Background technique [0002] In general, as a material exhibiting PTCR characteristics (Positive Temperature Coefficient of Resistivity), adding various semiconductor dopants to BaTiO has been proposed. 3 in the composition. The Curie temperature of these compositions is about 120°C. Depending on the application, the Curie temperature of these compositions needs to be varied. [0003] For example, it has been proposed that by adding to BaTiO 3 SrTiO 3 to change the Curie temperature. In this case, however, the Curie temperature changes only in the negative direction and not in the positive direction. Currently, only PbTiO is known 3 As an additive material for changing the Curie temperature in the positive direction. However, due to the PbTi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/46H01C7/02
Inventor 岛田武司田路和也
Owner HITACHI METALS LTD