Plasma processing apparatus, chamber internal part, and method of detecting longevity of chamber internal part

A plasma and processing device technology, which is applied in the field of plasma processing devices, can solve the problems of being unable to solve the problem of wasting abnormal discharge, and cannot accurately detect the life of components in the chamber of the plasma processing device, so as to prevent the life from reaching the end of life and prevent waste.

Inactive Publication Date: 2009-09-30
TOKYO ELECTRON LTD
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Problems solved by technology

[0013] However, none of the above-mentioned existing technologies can accurately detect the life of the components in the chamber in the plasma processing device, and still cannot solve the waste caused by replacing the components in the chamber before their life, due to the continued use of parts that have passed their life. The abnormal discharge and other problems caused by

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  • Plasma processing apparatus, chamber internal part, and method of detecting longevity of chamber internal part
  • Plasma processing apparatus, chamber internal part, and method of detecting longevity of chamber internal part
  • Plasma processing apparatus, chamber internal part, and method of detecting longevity of chamber internal part

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Embodiment Construction

[0061] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

[0062] figure 1 It is a cross-sectional view showing a schematic configuration of a substrate processing apparatus which is a plasma processing apparatus according to an embodiment of the present invention. This substrate processing apparatus is configured to perform plasma processing such as RIE (Reactive Ion Etching) processing and ashing processing on a semiconductor wafer W serving as a substrate.

[0063] exist figure 1 Among them, the substrate processing apparatus 10 includes: a cylindrical processing chamber 11; Seat 12.

[0064] In the substrate processing apparatus 10 , an exhaust flow path 13 serving as a flow path for discharging gas in a processing space S described later to the outside of the processing chamber 11 is formed by the inner wall of the processing chamber 11 and the side surface of the susceptor 12 . An exhaust plate 14 is arrange...

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Abstract

The present invention provides a plasma processing apparatus that can accurately detect the longevity of a chamber internal part to eliminate the waste of the replacement of the chamber internal part that has not reached its end of longevity and prevent the occurrence of troubles caused by continuously using the chamber internal part that has reached its end of longevity. The focus ring 26 and the like chamber internal parts for plasma processing apparatus, use the substrate processing apparatus 10 of the chamber internal part to perform RIE (reactive ion etching) processing to the wafer W, wherein, the longevity detecting elemental layers 51 and 52 are comprised of elements different from the constituted material, for example, scandium (Sc), for monitoring the luminous spectrum of the processing gas by using the plasma irradiance light splitter 46, the longevity of the focus ring 26 and the like chamber internal parts are detected by detected the light spectrum caused by the longevity detecting elemental layers 51 and 52.

Description

technical field [0001] The invention relates to a plasma processing device, a chamber inner part and a life detection method of a chamber inner part, especially a plasma processing device, a chamber inner part and a life detection method of a chamber inner part capable of accurately detecting the life of a chamber inner part. Background technique [0002] The chamber internal parts of the plasma processing apparatus, such as a focus ring made of silicon, electrodes, and an insulator made of quartz, are worn out due to sputtering of plasma, and therefore need to be replaced periodically as consumables. [0003] However, it is very difficult to predict or detect the replacement timing of parts inside the chamber as consumables, so there is a problem of waste due to being replaced before the life is exhausted, or due to continued use after the life has been exhausted, such as Abnormal discharge is generated due to the gap between parts, and problems such as particles are genera...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/3065G01N21/66H05H1/46
CPCH01J37/32642H01J37/32623H01J37/32963H01J37/32467
Inventor 中山博之守屋刚
Owner TOKYO ELECTRON LTD
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