Method for manufacturing a semiconductor device, method and structure for mounting the semiconductor device

Abstract

The present invention provides a method for manufacturing a semiconductor device for improving a productivity of the semiconductor device, a method and a structure for mounting the semiconductor device. A protective layer (4) is coated with an acroid resin which is used as a light-sensitive resin for forming a bulging body (5), to form a resin layer. On the resin layer, a mask having an opening portion is located at a prescribed position, further part of the resin layer exposing from the opening portion is exposed by irradiating ultraviolet on the mask. By means of solidifying the resin through the ultraviolet, a cylinder-shaped bulging body (5b) having a plane top is formed. Then, the ultraviolet (11) is irradiated on the bulging body (5b) to heat the bulging body (5b), such that the acroid resin for forming the bulging body (5b) is melted. Due to a surface tension generated on the melted resin, the top of the planar bulging body (5b) is deformed into a smooth curved face. thereby a near-hemisphere-shaped bulging body (5) is formed from the bulging body (5b).

Description

[0001] The present invention is a divisional application of the application number 200610068103.7 filed by the applicant Seiko Epson Co., Ltd. on March 21, 2006, and the title of the invention is "Semiconductor device manufacturing method, semiconductor device installation method and installation structure". technical field [0002] The present invention relates to a manufacturing method of a semiconductor device, a mounting method and a mounting structure of the semiconductor device. Background technique [0003] Conventionally, COG (Chip On Glass) connection is known as a connection method for mounting a driving IC on a display device substrate. In this COG connection, for example, Au-plated bumps (hereinafter simply referred to as bumps) as electrodes are formed on the driving IC. Then, a mounting method is employed in which the bumps formed on the driver IC and the bumps formed on the The terminal electrodes on the substrate of the display device are electrically connec...

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Problems solved by technology

However, if the shape of the protrusion is controlled by curing the photosensitive insulating resin by exposure to ultraviolet rays, the exposure conditions will change due to the deterioration of the exposure lamp, making it difficult to control the shape.

As a result, there is a problem that the productivity of the semiconductor device is lowered.

[0008] Furthermore, it is considered that if a resin with a low elastic modulus such as silicon is used for the resin forming the core of the protruding electrode, the resin forming the core of the protruding electrode will be larger than necessary due to the conditions of the pressurization process during mounting. Deformation, resulting in disconnection of the wiring of the protruding electrode

Also in this case, there is a problem that the connection reliability between the protruding electrodes of the driving IC and the terminal electrodes on the substrate is reduced.

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