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Ultrasonic spray tunnel furnace and method used for preparing large-area tin dioxide transparent conductive film

A technology of ultrasonic spray and tunnel furnace, applied in the direction of furnace, circuit, furnace type, etc., can solve the problems of high nozzle temperature, uneven film formation, difficult internal pressure control, etc., and achieve the effect of simple structure and reduced corrosion

Inactive Publication Date: 2009-10-28
HUNAN NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Chinese patent application number 200620028079.X discloses a special nozzle for preparing transparent conductive film by ultrasonic spray method, in which the mist enters the air intake pipe from the air inlet, and the slit width of this nozzle is 1.5mm, and the deposition speed of the film is relatively slow
There is also no cooling water layer and insulation layer, resulting in high temperature inside the nozzle, resulting in the formation of large particle fog film
Chinese patent application No. 02150785.6 discloses a nozzle with a large area of ​​uniform transparent conductive film. Its internal pressure is not easy to control, and it is easy to cause uneven film formation.

Method used

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  • Ultrasonic spray tunnel furnace and method used for preparing large-area tin dioxide transparent conductive film
  • Ultrasonic spray tunnel furnace and method used for preparing large-area tin dioxide transparent conductive film
  • Ultrasonic spray tunnel furnace and method used for preparing large-area tin dioxide transparent conductive film

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Embodiment 1

[0020] Embodiment 1: Ultrasonic spray tunnel furnace

[0021] With reference to the accompanying drawings: an insulation layer 1 is provided outside the tunnel furnace, and the tunnel furnace includes a heating zone 3, a working zone 4 and an annealing and heat preservation zone 5. The nozzles provided in the working area 4 are connected to an ultrasonic fogger 15 . A heating pipe 7 is arranged in the spray tunnel furnace, and a roller 8 is installed in the furnace, and a conveying mesh belt 2 is installed on the roller 8, and the substrate material 6 is placed on the conveying mesh belt 2 for transmission. The substrate material 6 is heated in the heating zone 3 , deposited in the working zone 4 , and annealed and cooled in the annealing and holding zone 5 . The temperature rise, working area temperature and annealing holding area temperature are all monitored by computer.

[0022] A nozzle insulation layer 9 is arranged outside the nozzle, and a nozzle water cooling layer ...

Embodiment 2

[0024] The method for preparing large-area transparent conductive film by ultrasonic spray method comprises the following steps:

[0025] (1) according to prior art preparation F / Sn molar percentage is the solution of 1%~10%; Pack into the ultrasonic fogger that is connected with nozzle and fog;

[0026] (2) The substrate material is carried by the conveyor belt into the tunnel furnace and heated in the heating zone;

[0027] (3) The substrate material is conveyed into the working area by the conveyor network, and the temperature is kept constant at 300°C to 500°C. The nozzle sprays the fogged mist evenly on the substrate material, and the entire surface of the substrate material 6 will deposit transparent conductive material. Thin film, the waste gas after reaction is pumped out from the waste gas discharge pipe by the suction pump;

[0028] (4) The substrate material is sent to the annealing and heat preservation zone by the conveyor belt for annealing and cooling.

[0029...

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Abstract

The invention discloses an ultrasonic spray tunnel furnace and a method used for preparing large-area tin dioxide transparent conductive film. The ultrasonic spray tunnel furnace comprises three areas of a heating area, a working area and an annealing insulating area, a nozzle arranged above a substrate material in the working area and an ultrasonic sprayer connected with the nozzle; the upper end of the nozzle is provided with 5 to 30 smoke inlet pipelines; one side of the nozzle, close to an outlet of the tunnel furnace, is provided with a waste gas exhaust channel; 5 to 30 waste gas exhaust pipelines are arranged above the waste gas exhaust channel; and the waste gas exhaust pipelines are connected with an air extracting pump. The invention can lead the smoke to be evenly ejected in the nozzle, has even film forming, can reduce the temperature in the nozzle, can reduce the generation of large-particle smoke films, can be beneficial to exhausting the waste gas and preparing the even films with smooth surfaces and can reduce the corrosion of HCl to mesh belts; a lifting device thereof is beneficial to adjusting the distance between the nozzle and the substrate surface and obtaining optimal deposition parameters. The invention adopts the mesh belts for transmission, has simple structure and is applicable to industrial flow line production.

Description

technical field [0001] The invention relates to an ultrasonic spray tunnel furnace and a method for preparing a large-area tin dioxide transparent conductive film. The tin dioxide transparent conductive film is used for transparent electrodes of solar cells. The invention belongs to the field of material plating. Background technique [0002] Chinese patent application number 02150786.4 discloses a scanning device for spraying and depositing a large area of ​​uniform transparent conductive film. The substrate is placed on the substrate tray, heated by the substrate tray, and the nozzle is used for scanning and spraying during deposition. Chinese patent 200520025374.5 discloses equipment for preparing nano-oxide transparent conductive films by ultrasonic rapid deposition. The method is to place the substrate on a red copper plate heating furnace, and realize the deposition of the entire substrate through the overall movement of the heating furnace and the substrate. . The...

Claims

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Application Information

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IPC IPC(8): F27B9/02F27B9/12F27B9/24F27B9/30H01L31/0224
Inventor 羊亿彭星煜李广
Owner HUNAN NORMAL UNIVERSITY
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