Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for growing controllable quantum dots and quantum rings

A technology of quantum rings and quantum dots, which is applied in the field of semiconductor material growth and can solve problems such as unpatterned substrate research reports

Inactive Publication Date: 2011-02-02
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
View PDF0 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

So far, there are methods for preparing graphic substrates combined with the SK growth mode, but there is no research report on the direct application of graphic substrates to the droplet epitaxy growth method.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for growing controllable quantum dots and quantum rings
  • Method for growing controllable quantum dots and quantum rings
  • Method for growing controllable quantum dots and quantum rings

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0054] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0055] So far, the methods adopted at home and abroad to grow quantum rings or quantum rings with different shapes and densities by using droplet epitaxy include: (1) using different deposition amounts, (2) using different growth temperatures.

[0056] Although the method (1) can accurately control the single deposition amount of the same sample, it is difficult to realize the precise quantitative control of the deposition amount in different regions of the same sample, neither is it easy to conduct research through accurate data comparison, nor is it feasible to put into quantitative production .

[0057] Although method (2) can accurately control the single growth temperature of the same sample, it is difficult to achie...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for growing controllable quantum dots and quantum rings, which comprises the steps: preparing a mu m-magnitude photolithography plate containing bar-shaped regions, square hole areas and round hole areas; performing ordinary photoetching on a patterned substrate of the photolithography plate; preparing the patterned substrate through wet etching; and adopting certain growth conditions and a molecular beam epitaxial (MBE) growth method of deposition amount to grow a quantum dot and quantum ring structure of which the density of the quantum dots is gradually smaller, the density of the quantum rings is gradually larger and the positions are controllable on the same substrate slice. The method is utilized to prepare the patterned substrates with different morphologies on different regions on the same substrate under same growth conditions by introducing a substrate treatment mode of the patterned substrates, thereby ensuring the morphologies and distribution of the quantum dots or the quantum rings formed on the plane are changed, and realizing the modulation of the density and distribution positions of the quantum dots and the quantum rings.

Description

technical field [0001] The invention relates to the technical field of semiconductor material growth, in particular to a method for growing InAs / GaAs controllable quantum dots and quantum rings in combination with a pattern substrate by droplet epitaxy. Background technique [0002] Low-micron nanostructure materials have been widely used in quantum information processing, quantum cryptography communication, etc. Many quantum devices with practical value, such as single-molecule light source, can only be realized based on the controllable growth of quantum dots. The current growth of low-micron nanostructure materials includes molecular beam epitaxy (MBE) growth technology, metal organic compound vapor deposition technology (MOCVD) and so on, among which strained self-assembly (SK) growth technology based on molecular beam epitaxy (MBE) growth technology is the most commonly used growth technique. [0003] InAs quantum dots in GaAs have become a typical material system sele...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/00H01L33/00H01S5/34H01S5/00H01S5/343
Inventor 赵暕陈涌海王占国徐波
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com