Methods for forming semiconductor component and gate

A semiconductor and gate technology, which is applied in the field of semiconductor devices and gate formation, can solve the problems of poor consistency of etching results, and achieve the effect of improving inconsistent etching results
CN101572218AActive Publication Date: 2009-11-04SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP
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Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Applications(China)
Current Assignee / Owner
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP
Publication Date
2009-11-04

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Abstract

The invention discloses a method for forming a semiconductor component, comprising the following steps: etching a last substrate; detecting the distribution characteristic of the etching result of the last substrate; adjusting the exposure parameters of a next substrate during the photoetching of a masking film pattern; processing the next substrate by photoetching according to the exposure parameters thereof so as to from an etched masking film pattern; and etching the next substrate. The invention also discloses a method for forming a related gate. The methods for forming the semiconductor component and the gate improves the inconsistent etching results due to certain specific distribution characteristic of the etching result resulted from different etching equipment.
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Description

technical field

[0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a semiconductor device and a gate. Background technique

[0002] The integrated circuit manufacturing process is a planar manufacturing process that combines photolithography, etching, deposition, ion implantation and other processes to form a large number of various types of complex devices on the same substrate and connect them to each other to have a complete electronic functions. Among them, any deviation in the process may cause the performance parameters of the circuit to deviate from the design value. At present, as the device feature size (CD, Critical Dimension) of VLSI is continuously reduced proportionally and the integration level is continuously improved, stricter requirements are put forward for the control of each manufacturing process. The accuracy requirements of the results also put forward higher requirements. [0003...

Claims

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