Methods for forming semiconductor component and gate

A semiconductor and gate technology, which is applied in the field of semiconductor devices and gate formation, can solve the problems of poor consistency of etching results, and achieve the effect of improving inconsistent etching results

Active Publication Date: 2009-11-04
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0013] The invention provides a method for forming a semiconductor device and a gate, so as to improve the poor consistency of the existing etching results

Method used

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  • Methods for forming semiconductor component and gate
  • Methods for forming semiconductor component and gate
  • Methods for forming semiconductor component and gate

Examples

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Effect test

no. 1 example

[0077] The first embodiment of the present invention introduces a method for forming a semiconductor device that uses the distribution of etching results to adjust the exposure parameters of the photolithography process. image 3 A schematic diagram illustrating the process of adjusting the photolithography process using etching result information in the first embodiment of the present invention, Figure 4 It is a flow chart of the method for forming a semiconductor device according to the first embodiment of the present invention, combined below image 3 and Figure 4 Describe in detail the specific implementation steps of the first embodiment of the present invention:

[0078] Step S401: Etching the previous substrate.

[0079] The previous substrate to be etched is sent into the etching device 301 to be etched. An etching mask pattern has been formed on the previous substrate. The etching mask pattern can be formed by photoresist directly by photolithography technology,...

no. 2 example

[0107] The second embodiment of the present invention introduces a method for forming a semiconductor device in which the distribution of etching results is used to adjust the exposure parameters of the photolithography process according to the distribution characteristics of different etching results of different etching equipment. Figure 9 It is a flow chart of the method for forming a semiconductor device according to the second embodiment of the present invention, combined below Figure 9 Describe in detail the specific implementation steps of the second embodiment of the present invention:

[0108] Step S901: using different etching equipment to process different substrates separately.

[0109] Since the size distribution of etching patterns obtained by different etching equipment may be different after etching the substrate, it is possible to use different etching equipment to process different substrates (such as experimental pieces or samples) respectively. Etching t...

no. 3 example

[0124] In the manufacturing process of semiconductor devices, the size of the gate will affect multiple performance parameters of the device, and the requirements for its size control are extremely strict. The third embodiment of the present invention introduces a method for forming a gate by using the distribution of gate etching results to adjust the exposure parameters during photolithography to improve the controllability of the gate size. Figure 10 is a flow chart of the gate formation method of the third embodiment of the present invention, Figure 11 to Figure 13 In order to illustrate the device cross-sectional view of the gate formation process in the third embodiment of the present invention, the following is combined with Figure 10 to Figure 13 The specific implementation steps of the third embodiment of the present invention are described in detail:

[0125] Step S1001: Etching the previous substrate to form a gate pattern on the previous substrate.

[0126] ...

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Abstract

The invention discloses a method for forming a semiconductor component, comprising the following steps: etching a last substrate; detecting the distribution characteristic of the etching result of the last substrate; adjusting the exposure parameters of a next substrate during the photoetching of a masking film pattern; processing the next substrate by photoetching according to the exposure parameters thereof so as to from an etched masking film pattern; and etching the next substrate. The invention also discloses a method for forming a related gate. The methods for forming the semiconductor component and the gate improves the inconsistent etching results due to certain specific distribution characteristic of the etching result resulted from different etching equipment.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a semiconductor device and a gate. Background technique [0002] The integrated circuit manufacturing process is a planar manufacturing process that combines photolithography, etching, deposition, ion implantation and other processes to form a large number of various types of complex devices on the same substrate and connect them to each other to have a complete electronic functions. Among them, any deviation in the process may cause the performance parameters of the circuit to deviate from the design value. At present, as the device feature size (CD, Critical Dimension) of VLSI is continuously reduced proportionally and the integration level is continuously improved, stricter requirements are put forward for the control of each manufacturing process. The accuracy requirements of the results also put forward higher requirements. [0003...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/00H01L21/027H01L21/66H01L21/28
Inventor 黄怡杜珊珊张海洋
Owner SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP
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