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Method for forming gate oxide

A gate oxide, thermal oxidation technology, applied in electrical components, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve problems such as the inability to fundamentally adjust the threshold of a single device

Inactive Publication Date: 2011-07-06
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP
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  • Abstract
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Problems solved by technology

However, this method adjusts the threshold value of the floating gate structure by forming a specific rectification circuit, and cannot fundamentally adjust the threshold value of a single device

Method used

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  • Method for forming gate oxide
  • Method for forming gate oxide
  • Method for forming gate oxide

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[0041]As a first embodiment of the present invention, the specific steps of forming a gate oxide layer include:

[0042] Step 11: performing a thermal oxidation operation on the substrate, and forming a gate oxide layer with a target thickness on the substrate.

[0043] A well region is formed on a substrate, and an active region of a device is defined, and the base is formed after shallow trench isolation is completed. The substrate includes, but is not limited to, silicon material including semiconductor elements, such as silicon or silicon germanium (SiGe) in single crystal, polycrystalline or amorphous structure, or silicon-on-insulator (SOI).

[0044] The well region is formed by an ion implantation process; in the traditional process, after the well region is formed, it undergoes a thermal oxidation operation introduced during the subsequent formation of a gate oxide layer to complete the threshold voltage adjustment operation. Corresponding to a certain operating volta...

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Abstract

The invention relates to a method for forming a gate oxide. The method comprises the following steps: processing a substrate by thermal oxidization to form a gate oxide with a target thickness on the substrate; carrying out heat treatment on the substrate with the gate oxide by buffer gas; and adjusting a standard threshold value of the gate oxide to a target threshold value. Another method for forming the gate oxide comprises the following steps: forming a first gate oxide with the thickness less than the target thickness on the substrate; and carrying out heat treatment on the substrate withthe first gate oxide by reaction gas containing oxygen-based gas to form the gate oxide with the target thickness and the target threshold value. The threshold voltage of a complementary metal oxidesemiconductor (CMOS) apparatus corresponding to the gate oxide with the target thickness can be changed without adjusting the ion injection operation of a well region.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a gate oxide layer. Background technique [0002] Threshold voltage (Vt) is an important performance parameter of semiconductor devices. In the traditional process, the threshold voltage is usually adjusted by controlling the ion implantation process in the well region. [0003] Before entering the 90nm process node, devices are usually manufactured using a dual gate (dual gate) process, that is, each CMOS device includes a core device (core gate) and an input and output device (I / O gate); when the CMOS device is working, The gate oxide layers corresponding to the core device and the input and output devices each have their withstand operating voltages; for example, 1.2V and 3.3V respectively. [0004] After entering the 90nm process node, devices are usually manufactured using a triple gate process, that is, each CMOS device includes a ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/28H01L21/316H01L21/3105H01L21/336
Inventor 何有丰
Owner SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP
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