Improved structure of heater of czochralski crystal growing furnace

A heater and single crystal furnace technology, which is applied in the direction of single crystal growth, crystal growth, chemical instruments and methods, etc., can solve the problems of complicated operation and increased equipment investment, so as to reduce equipment investment, simplify operation procedures, and reduce manufacturing. cost effect

Inactive Publication Date: 2009-11-18
ZHEJIANG JINGSHENG MECHANICAL & ELECTRICAL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Such a setting increases equipment investment and complicates operation

Method used

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  • Improved structure of heater of czochralski crystal growing furnace
  • Improved structure of heater of czochralski crystal growing furnace
  • Improved structure of heater of czochralski crystal growing furnace

Examples

Experimental program
Comparison scheme
Effect test

specific Embodiment 1

[0018] The improved structure of the graphite heater of the Czochralski single crystal furnace in specific embodiment 1 is as Figure 4 Shown:

[0019] A thinning heating section is arranged on a common annular graphite heater, and the radial cross-sectional area of ​​the thinning heating section is 2 / 3~3 / 4 of the radial cross-sectional area of ​​the rest of the heater; A section refers to a portion from the bottom of the heater to 1 / 5 to 1 / 4 of the total height. The thinned heating section has the same radial thickness as the rest of the heater, and the slot width of the thinned heating section is larger than the slot width of the rest of the heater.

specific Embodiment 2

[0020] The improved structure of the graphite heater of the Czochralski single crystal furnace in specific embodiment 2 is as Figure 5 , 6 Shown:

[0021] A thinning heating section is arranged on a common annular graphite heater, and the radial cross-sectional area of ​​the thinning heating section is 2 / 3~3 / 4 of the radial cross-sectional area of ​​the rest of the heater; A section refers to a portion from the bottom of the heater to 1 / 5 to 1 / 4 of the total height. The thinned heating section has the same groove width as the rest of the heater, and the radial thickness of the thinned heating section is smaller than the radial thickness of the rest of the heater.

[0022] As long as the radial cross-sectional area of ​​the thinning heating section is kept consistent, the effects of using these two methods are the same.

[0023] In the same way, the content of specific embodiment 3 can also be obtained:

[0024] A thinning heating section is arranged on a common annular gr...

specific Embodiment 4

[0025] A 22-inch heater is used, the maximum power is 165KW, the total resistance of the heating sheet is 24 milliohms, 120KW power is applied when chemicalizing materials, and 80kW power is applied when the diameter is equal. The total height of the heater is 500mm. figure 1 The height of the lower part of the ordinary standard heater shown is 125mm heating sheet, the power is 30KW when the material is turned on, and the power is 20KW when the diameter is equal. Through design and processing, after reducing the cross-sectional area of ​​the 125mm heating sheet at the lower part of the heater by 1 / 3, the power of the lower 125mm heating sheet of the single crystal furnace is 40kw when the material is chemicalized, and the power is 26.7kw when the diameter is equal, which is equivalent to adding a small bottom heater.

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Abstract

The invention relates to a heater device, aiming at providing an improved structure of a graphite heater of a czochralski crystal growing furnace. The heater comprises the ring-shaped graphite heater evenly provided with slots in a crossing way along the axis direction and a thinning heating section arranged on the ring-shaped graphite heater; wherein, the radial cross-sectional area of the thinning heating section is 2/3-3/4 of that of the rest parts of the heater; the thinning heating section is the part from the bottom of the heater to the height of 1/5-1/4 of the total height. The invention leads the heating power to be increased at the thinning part of the heater and changes the axial distribution, so as to indirectly form additional bottom heater function at the bottom of the ring-shaped heater, thus achieving the effect of two heaters which are the ring-shaped bottom heater and the bottom heater in the prior art by the structural design of the single graphite heater. Therefore, the invention not only reduces the equipment investment, but also lowers the manufacturing cost of the graphite heater and simplifies the operating procedures.

Description

technical field [0001] The invention relates to a heater device, in particular to an improved structure of a graphite heater for a Czochralski single crystal furnace. Background technique [0002] The Czochralski method (Czochralski, CZ method) is to put the raw polysilicon crystal block into a quartz crucible, heat and melt it in a single crystal furnace, and then immerse a rod-shaped seed crystal (seed crystal) with a diameter of only 10mm into the molten crystal. in the liquid. At a suitable temperature, the silicon atoms in the melt will form regular crystals on the solid-liquid interface along the silicon atom arrangement structure of the seed crystal, becoming a single crystal. Slightly rotate the seed crystal upwards, and the silicon atoms in the melt will continue to crystallize on the previously formed single crystal, and continue its regular atomic arrangement structure. If the entire crystallization environment is stable, crystallization can be formed repeatedly...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/14
Inventor 曹建伟张俊朱亮邱敏秀
Owner ZHEJIANG JINGSHENG MECHANICAL & ELECTRICAL
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