Electronic component

A technology of electronic components and device chips, applied in the direction of electrical components, electric solid devices, circuits, etc., can solve the problems of low viscosity and difficulty in miniaturization of electronic components, and achieve high air tightness

Inactive Publication Date: 2009-12-09
TAIYO YUDEN KK
View PDF5 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the viscosity of the SOG oxide film 62 is low, so when the device chip 20 is sealed, the SOG oxide film 62 may reach the surface of the working a

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Electronic component
  • Electronic component
  • Electronic component

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0043] [Example 1]

[0044] Figure 5 (a) is a cross-sectional view of the electronic component of Example 1. Reference Figure 5 (a) The wiring pattern 12 is provided on the upper surface of the insulating substrate 10 made of ceramics or the like. External connection terminals 16 are provided on the lower surface of the insulating substrate 10. An internal wiring 14 connecting the wiring pattern 12 and the external connection terminal 16 is provided inside the insulating substrate 10. The device chip 20 having the working area 22 on the lower surface is mounted on the insulating substrate 10 in a flip-chip manner. That is, the device chip 20 is connected to the wiring pattern 12 via the bump 28. A pattern 32 is provided on the insulating substrate 10 with a gap between its upper surface and the lower surface of the device chip 20. The SOG oxide film 30 is provided to cover the side surfaces of the device chip 20 and the pattern 32. Furthermore, the SOG oxide film 30 is formed to...

Example Embodiment

[0053] [Example 2]

[0054] Embodiment 2 is an example in which a metal film is provided on the outer periphery of the lower surface of the device chip. Picture 9 (a) is a cross-sectional view of the electronic component of Example 2. Picture 9 (b) is a view in which the device chip 20, the metal film 24 of Cu or Au, and the pattern 32 are seen through from the top of the electronic component of Embodiment 1. Reference Picture 9 (a) A metal film 24 is provided on the area of ​​the lower surface of the device chip 20 opposite to the upper surface of the pattern 32. The lower surface of the metal film 24 is covered by the SOG oxide film 30. Reference Picture 9 (b) The metal film 24 is arranged in a ring shape along the outer periphery of the device chip 20. The metal film 24 may not be formed in a part of the outer periphery of the device chip 20. Other structure and embodiment 1 Figure 5 (a) and Figure 5 (b) Same, and description is omitted.

[0055] According to Example 2, s...

Example Embodiment

[0056] [Example 3]

[0057] Embodiment 3 is an example in which the driven element is provided on the insulating substrate. Picture 10 It is a cross-sectional view of the electronic component of Example 3. Reference Picture 10 , A driven element 34 is formed on the insulating substrate 10 opposite to the lower surface of the device chip 20. The driven element 34 is separated from the lower surface of the device chip 20. As the driven element 34, for example, an inductor formed of a metal such as Cu, an MIM (Metal Insulator Metal) capacitor formed by laminating a metal film, an insulating film, and a metal film, and the like can be provided. In this way, at least one of a capacitor and an inductance can be provided as the driven element 34.

[0058] By forming the driven element 34 between the device chip 20 and the insulating substrate 10, the electronic components can be miniaturized. However, since the height of the gap 26 is large, SOG easily flows into the gap 26, and theref...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The present invention provides an electronic component which can seal with higher air tightness and can realize miniaturization. The electronic component of the invention comprises the following components: an insulating substrate (10); a device chip (20) which is equipped on the insulating substrate (10) with a reverse mode; a pattern (32) which is equipped on the insulating substrate (10) along the side surface of the device chip (20) with a mode that a clearance is provided between the upper surface of the pattern (32) and the lower surface of the device; and an SOG oxide film (30) which covers the side surface of the device chip (20) and the pattern (32) with a mode that the SOG oxide film is inserted into the clearance between the upper surface of the pattern (32) and the lower surface of the device chip (20) and a clearance (26) is formed between the upper surface of the insulating substrate (10) and the lower surface of the device chip (20).

Description

technical field [0001] The present invention relates to electronic components, in particular to electronic components in which device chips are flip-chip mounted on an insulating substrate. Background technique [0002] Device chips that vibrate in the working area, such as SAW (Surface Acoustic Wave) filters and FBAR (Film Bulk Acoustic Resonator: Film Bulk Acoustic Resonator) filters, are mounted so that the vibrations are not suppressed. Therefore, mount to the package in such a way that the active area of ​​the device chip surface meets the void. [0003] figure 1 It is a figure for demonstrating the electronic component described in patent document 1 and 2. refer to figure 1 , the wiring pattern 12 , the internal wiring 14 and the external connection terminal 16 are provided on the bottom surface of the package substrate 70 having the cavity 78 . The device chip 20 is flip-chip mounted on the wiring pattern 12 using bumps 28 . The package substrate 70 is covered wi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L23/14H01L23/29H01L23/31H01L23/48H01L25/03H03H9/25
CPCH01L24/97H01L2224/16225
Inventor 横山刚宓晓宇原基扬上田政则上田知史高桥岳雄
Owner TAIYO YUDEN KK
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products