GaAs-based E/D PHEMT single-chip integrated microwave switch and manufacturing method thereof

Abstract

The invention discloses a GaAs-based E / D PHEMT single-chip integrated microwave switch and a manufacturing method thereof. The single-chip integrated microwave switch consists of a single-pole double-throw switch based on full-depletion GaAs PHEMT and an inverter based on DCFL; the single-pole double-throw switch and the inverter are integrated by a single chip; a control signal end of the single-pole double-throw switch is connected with an input end and an output end of the inverter, and the single-chip integrated microwave switch adopts 0V and -3V as high and low levels respectively; and aVDD direct current end of the inverter is connected with 0V, and the primary grounding end is connected with the -3V. The full-depletion microwave switch and the inverter are successfully integrated in the same chip so as to realize the integration of a logic circuit and a switch circuit, and the whole circuit only needs 1bit control signals so as to effectively reduce the number of control portsof the switch circuit, save the area of the chip and lay a good foundation for realizing larger-scale more complex circuit integration by adopting E / D HEMT technology in the future.

Description

technical field [0001] The invention relates to the technical field of compound semiconductor MMIC, in particular to a GaAs-based enhanced / depleted (E / D) PHEMT monolithic integrated microwave switch and a manufacturing method thereof. Background technique [0002] Microwave switches need to use logic circuits to control their on-off states during use. One method is to implement the two parts of the circuit with different chips, and connect the output port of the logic circuit with the control voltage port of the microwave switch through a lead wire. This is the solution used in many microwave systems at present. However, when there are many switch channels, the required number of control signal bits will increase accordingly. Taking the multi-band microwave switch as an example, the switch is designed as a single-pole 7-throw switch (SP7T) in order to meet the switching of mobile phone transceiver circuits and the conversion between frequency bands such as GSM and UMTS. Th...

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Problems solved by technology

[0004] In view of this, the main purpose of the present invention is to provide a GaAs-based E / D PHEMT monolithic integrated microwave switch and its manufacturing method, to solve the problem that in complex mobile phone systems, too many control signal leads lead to a large number of pads, The problem of wasting most of the chip area, while reducing the power consumption of the mobile phone and reducing the number of control ports of the switching circuit

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